2SJ615

Ordering number : ENN7179A 2SJ615 P-Channel Silicon MOSFET 2SJ615 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2062A [2SJ615] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings --30 ± 20 --2.5 --10 1.0 3.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0 VDS=--30V, VGS=0 VGS=± 16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-1.3A ID=-1.3A, VGS=--10V ID=-0.7A, VGS=--4V Ratings min --30 --1 ± 10 --1.2 1.1 1.6 210 330 270 460 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : JV Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1502 TS IM TA-3846 / 41002 TS IM TA-3523 No.7179-1/4 2SJ615 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=-2.5A VDS=--10V, VGS=-10V, ID=-2.5A VDS=--10V, VGS=-01V, ID=-2.5A IS=--2.5A, VGS=0 Ratings min typ 185 30 20 7 22 19 7.5 4.7 0.8 0.7 --0.97 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --1.3A RL=11.5Ω VDD= --15V D VOUT G 2SJ615 P.G 50Ω S --2.0 --1.8 --1.6 ID -- VDS --6 --5 V V --8 V --2.0 --1.8 --1.6 ID -- VGS VDS= --10V V --4 Drain Current, ID -- A Drain Current, ID -- A --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1 0 --1.4 V --1.4 --1.2 --1.0 --0.8 VGS= --3V C Tc= 0 --0.5 --1.0 --1.5 --2.0 --2.5 --0.6 --0.4 --0.2 0 --25 --3.0 °C 25°C --3.5 75° --4.0 Drain-to-Source Voltage, VDS -- V 800 IT02665 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 600 IT04263 RDS(on) -- Tc Tc=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 600 500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 500 400 ID= --0.7A --1.3A -I D= 300 , VG 0.7A --4 S= V 200 1.3A I D= -- = --10 , V GS V 100 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT04264 Case Temperature, Tc -- °C IT04265 No.7179-2/4 2SJ615 3 yfs -- ID VDS= --10V Forward Transfer Admittance, yfs -- S 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IF -- VSD VGS=0 1.0 7 5 Tc = --2 5° C 75 °C 2 C 5° 3 2 Forward Current, IF -- A Tc=75 °C 0 --0.2 --0.4 0.1 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.6 --0.8 --1.0 --1.2 --1.4 Drain Current, ID -- A 100 7 IT04266 1000 7 5 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V 25°C --25°C IT04267 VDD= --15V VGS= --10V td(off) Switching Time, SW Time -- ns 5 Ciss, Coss, Crss -- pF 3 2 3 2 Ciss 10 7 5 3 2 tf 100 7 5 3 2 td(on) tr Coss Crss 0 --5 --10 --15 --20 --25 --30 IT02671 1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 Drain Current, ID -- A --10 IT04268 2 --10 7 5 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --2.5A Drain Current, ID -- A IDP= --10A