2SJ616

Ordering number : ENN7270A 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2062A [2SJ616] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings --30 ± 20 --6 --24 1.5 3.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0 VDS=--30V, VGS=0 VGS=± 16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-3A ID=-3A, VGS=--10V ID=-1.5A, VGS=--4V Ratings min --30 --1 ± 10 --1.2 2.9 4.2 53 105 69 147 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : JW Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41003 TS IM TA-100340 / 72502 TS IM TA-100075 No.7270-1/4 2SJ616 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=-6A VDS=--10V, VGS=--10V, ID=-6A VDS=--10V, VGS=--10V, ID=-6A IS=--6A, VGS=0 Ratings min typ 510 115 78 11 12 34 23.5 11 2.4 1.7 --0.9 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD= --15V 0V --10V VIN ID= --3A RL=5Ω VIN VOUT PW=10µs D.C.≤1% D G P.G 50Ω 2SJ616 S --4.0 ID -- VDS --10.0 V --8.0 V --6.0 V --6 ID -- VGS VDS= --10V V --4.0 V --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --3 .5V Drain Current, ID -- A --5 Drain Current, ID -- A --4. 5 --4 --3.0V --3 --2 Tc= 75°C --25° C 0 --0.5 --1.0 --1.5 --2.0 --2.5 --1 VGS= --2.5V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --3.0 25°C --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 300 IT04757 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 200 IT04758 RDS(on) -- Ta Tc=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 150 200 150 --3A ID= --1.5A 100 -I D= , VG 1.5A --4 S= V 100 50 --10 V S= --3A, G I D= V 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT04759 Ambient Temperature, Ta -- °C IT04760 No.7270-2/4 2SJ616 2 yfs -- ID VDS= --10V 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 3 2 1.0 7 5 3 2 0.1 7 5 5 7--0.01 23 5 7 --0.1 --0.01 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 IT04762 23 5 7 --1.0 23 Drain Current, ID -- A 3 2 5 7 --10 2 IT04761 --0.001 --0.2 SW Time -- ID VDD= --15V VGS= --10V td(off) Ciss, Coss, Crss -- pF 1000 7 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 1.0 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 5 3 2 tf td(on) tr 100 7 5 3 0 --2 --4 --6 --8 75 C 25° C --25 °C Coss Crss --10 --12 Tc= C 5° --2 = Tc °C 25°C 75 Forward Current, IF -- A 10 7 5 --14 --16 --18 --20 Drain Current, ID -- A --10 --9 IT04763 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V IT04764 VGS -- Qg VDS= --10V ID= --6A Drain Current, ID -- A ASO IDP= --24A