2SJ635

Ordering number : ENN8277 2SJ635 P-Channel Silicon MOSFET 2SJ635 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC Converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --12 --48 1 30 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-60V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-6A ID=--6A, VGS=-10V ID=--6A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz Ratings min --60 --1 ±10 --1.2 9 13 45 65 2200 235 165 60 92 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PA MS IM TB-00001450 No.8277-1/4 2SJ635 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--30V, VGS=-10V, ID=--12A VDS=--30V, VGS=-10V, ID=--12A VDS=--30V, VGS=-10V, ID=--12A IS=--12A, VGS=0V Ratings min typ 18 80 200 125 45 10 7 --0.9 --1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7518-004 6.5 5.0 2.3 1.5 Package Dimensions unit : mm 7003-004 6.5 5.0 2.3 1.5 0.5 0.5 4 4 7.0 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 2 0.8 1.2 3 0 to 0.2 1.2 0.6 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit VDD= --30V VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --6A RL=5Ω D VOUT G P.G 50Ω 2SJ635 S No.8277-2/4 2SJ635 25°C --4 --1 0.0 --8 V .0V --6 .0 --4 . 0V --14 --12 --10 --8 --6 --4 --2 0 VDS= --10V Drain Current, ID -- A --5 .0 V --10 --8 --6 --3.0V --4 Drain Current, ID -- A --2 VGS= --2.5V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --1 --2 5°C 25° --25 C °C --3 Tc= 7 Tc= --25 °C 75°C --12 ID -- VDS V --16 ID -- VGS --5 IT09426 Drain-to-Source Voltage, VDS -- V 140 IT09425 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 140 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C ID= --6A 120 100 100 80 80 --6A I D= -S= , VG 4V 0V 60 60 --6 I D= --1 S= A, VG 40 40 20 0 0 --2 --4 --6 --8 --10 --12 --14 --16 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID IT09427 3 2 --10 7 5 Case Temperature, Tc -- °C IT09428 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS= --10V 3 Source Current, IS -- A 2 10 7 5 3 2 = Tc --2 °C 25 C 5° 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 75 °C 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 --0.01 --0.2 --0.4 Tc=7 5 --0.6 --25°C --0.8 25°C °C --1.0 --1.2 IT09430 Drain Current, ID -- A 5 3 IT09429 5 3 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD= --30V VGS= --10V Switching Time, SW Time -- ns Ciss Ciss, Coss, Crss -- pF 2 2 tf 100 7 5 3 2 1000 7 5 3 2 tr td(on) Coss Crss 10 --0.1 100 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 0 --10 --20 --30 --40 --50 --60 IT09432 Drain Current, ID -- A IT09431 Drain-to-Source Voltage, VDS -- V No.8277-3/4 2SJ635 --10 --9 VGS -- Qg VDS= --30V ID= --12A Drain Current, ID -- A --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 ASO IDP= --48A 10 ≤10µs Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 30 35 40 45 ID= --12A DC op 1m 10 era 0µ s s m s Operation in this area is limited by RDS(on). tio n 2 --0.1 --0.1 Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC 1.2 IT09433 35 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 5 7 --100 IT09434 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 30 25 0.8 20 0.6 15 0.4 10 0.2 5 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT09742 Case Temperature, Tc -- °C IT09435 Note on usage : Since the 2SJ635 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8277-4/4