2SJ651

Ordering number : ENN7501 2SJ651 P-Channl Silicon MOSFET 2SJ651 DC / DC Converter Applications Features • • • Package Dimensions unit : mm 2063A [2SJ651] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings --60 ±20 --20 --80 2.0 25 150 --55 to +150 Unit V V A A W W °C °C 2.55 2.55 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--10A Ratings min --60 --1 ±10 -1.2 11 17 --2.6 typ max Unit V µA µA V S Marking : J651 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52703 TS IM TA-100559 No.7501-1/4 2SJ651 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain“Miller”Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--10A, VGS=-10V ID=--10A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--30V, VGS=--10V, ID=-20A VDS=--30V, VGS=--10V, ID=-20A VDS=--30V, VGS=--10V, ID=-20A IS=--20A, VGS=0 Ratings min typ 45 65 2200 220 165 18 115 190 120 45 7.4 9 --0.95 --1.2 max 60 92 Unit mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --10A RL=3Ω VDD= --30V D VOUT G 2SJ651 P.G 50Ω S --50 --45 ID -- VDS Tc=25°C 0V --1 --45 ID -- VGS VDS= --10V °C --0.5 --1.0 --1.5 --2.0 --8 V Drain Current, ID -- A Drain Current, ID -- A --35 --30 --25 --20 --15 --10 --5 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --25 --20 --15 --10 --5 0 0 VGS= --3V --3.5 --4.0 --4.5 --5.0 °C Tc = --2 5°C 75° C 25 --2.5 --3.0 --3.5 Tc= --4V --30 --25 --4.0 75° --4.5 --5.0 IT06171 Drain-to-Source Voltage, VDS -- V IT06170 Gate-to-Source Voltage, VGS -- V No.7501-2/4 C --40 -- 6V --35 25° C --40 2SJ651 160 RDS(on) -- VGS ID= --10A 140 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 120 100 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 80 Tc= 75° C 60 40 20 0 0 60 -I D= 10 VG A, --4V S= V --10 S= 25°C --25°C VG 0A, = --1 ID 40 20 0 --50 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V --2.5 IT06172 100 Case Temperature, Tc -- °C VGS(off) -- Tc yfs -- ID IT06173 Forward Transfer Admittance, yfs -- S VDS= --10V ID= --1mA 7 5 3 2 10 7 5 3 2 VDS= --10V C 25° Cutoff Voltage, VGS(off) -- V --2.0 --1.5 = Tc 5 --2 °C 75° C --1.0 --0.5 1.0 7 5 --0.1 0 --50 --25 0 25 50 75 100 125 150 2 3 5 Case Temperature, Tc -- °C --100 7 5 3 2 7 --1.0 2 3 5 7 --10 2 3 IT06174 5 3 IF -- VSD VGS=0 Drain Current, ID -- A 5 7 --100 IT06175 SW Time -- ID td(off) VDD= --30V VGS= --10V Switching Time, SW Time -- ns Forward Current, IF -- A 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.3 --0.6 --0.9 --1.2 --1.5 IT06176 100 7 5 tf 5°C 25°C --25°C Tc=7 tr 3 2 td(on) 10 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 --0.01 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Drain Current, ID -- A --10 --9 IT06177 VGS -- Qg Ciss Gate-to-Source Voltage, VGS -- V VDS= --30V ID= --20A --8 --7 --6 --5 --4 --3 --2 --1 0 Ciss, Coss, Crss -- pF 1000 7 5 3 2 Coss Crss 100 7 0 --5 --10 --15 --20 --25 --30 IT06178 0 5 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V Total Gate Charge, Qg -- nC IT06179 No.7501-3/4 2SJ651 2 --100 7 5 ASO 10 2.5 PD -- Ta Drain Current, ID -- A 3 2 --10 7 5 3 2 --1.0 7 5 3 2 ID= --20A Operation in this area is limited by RDS(on). s 10 10 ms DC 0m s op era tio n 1m 0µ Allowable Power Dissipation, PD -- W IDP= --80A