2SJ655

Ordering number : EN7712A 2SJ655 SANYO Semiconductors DATA SHEET 2SJ655 Features • • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --12 --48 2.0 25 150 --55 to +150 144 --12 Unit V V A A W W °C °C mJ A Note : *1 VDD=--50V, L=1mH, IAV=--12A *2 L≤1mH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0V VDS=-100V, VGS=0V VGS= ±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-6A ID=--6A, VGS=-10V ID=--6A, VGS=-4V Ratings min --100 --1 ±10 --1.2 9 13 100 136 136 190 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : J655 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72506 MS IM TC-00000066 / 61504QB TS IM TA-3854 No.7712-1/5 2SJ655 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--50V, VGS=-10V, ID=--12A VDS=--50V, VGS=-10V, ID=--12A VDS=--50V, VGS=-10V, ID=--12A IS=--12A, VGS=0V Ratings min typ 2090 155 108 17 95 187 95 41 7 9 --0.88 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7508-003 Switching Time Test Circuit VIN VDD= --50V 10.0 3.2 3.5 7.2 4.5 2.8 0V --10V VIN PW=10µs D.C.≤1% ID= --6A RL=8.33Ω D VOUT 16.0 18.1 G 1.6 1.2 0.75 14.0 0.7 5.6 2SJ655 P.G 50Ω S 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 2.55 2.55 Avalanche Resistance Test Circuit L ≥50Ω RG 2SJ655 0V --10V 50Ω VDD No.7712-2/5 2SJ655 --25 ID -- VDS --1 0V Tc= -25°C --3.5 --20 --8 V V --4 --20 --6 V Drain Current, ID -- A --15 Drain Current, ID -- A --15 --10 --10 --5 --5 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --25 °C 25° C Tc= 7 VGS= --3V 5°C --3.0 25°C --4.0 75° C --4.5 Tc=25°C --25 ID -- VGS VDS= --10V --5.0 Drain-to-Source Voltage, VDS -- V 300 IT05374 250 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT05375 RDS(on) -- Tc ID= --6V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 200 150 150 Tc=75°C -4 V =V GS V , --10 -6 A =S= ID , VG 6A = -ID 100 25°C 100 --25°C 50 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID IT05376 --100 7 5 3 2 Case Temperature, Tc -- °C IT05377 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 VDS= --10V 2 10 7 5 3 2 1.0 7 5 --0.1 Source Current, IS -- A 3 --10 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 1000 7 7 --10 2 IT05378 --0.01 7 5 3 2 --0.001 --0.3 Tc = --0.6 C 25° °C --25 Tc= C 75° °C 75 --1.0 7 5 3 2 °C --25 °C --0.9 25 --1.2 IT05379 SW Time -- ID VDD= --50V VGS= --10V td(off) 5 3 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 Ciss 2 Ciss, Coss, Crss -- pF 1000 7 5 3 2 100 7 5 3 2 tf tr Coss Crss td(on) 100 7 0 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 --5 --10 --15 --20 --25 --30 IT05381 Drain Current, ID -- A IT05380 Drain-to-Source Voltage, VDS -- V No.7712-3/5 2SJ655 --10 --9 VGS -- Qg VDS= --50V ID= --12A Drain Current, ID -- A --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 ASO IDP= --48A