2SJ658

Ordering number : ENN7552 2SJ658 P-Channel Silicon MOSFET 2SJ658 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 [2SJ658] 5.0 4.0 4.0 Low ON-resistance. High-speed switching. 2.5V drive. 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -20 ±10 --2 --8 0.7 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 Ratings min --20 --10 typ max Unit V µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31504 TS IM TA-100561 No.7552-1/4 2SJ658 Continued from preceding page. Parameter Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VGS=±8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-1A ID=--1A, VGS=--4V ID=--0.5A, VGS=-2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-2A VDS=--10V, VGS=-4V, ID=-2A VDS=--10V, VGS=-4V, ID=-2A IS=--2A, VGS=0 --0.3 1.8 3 115 145 410 60 40 9 27 42 38 4.5 0.6 1.2 --0.9 --1.2 150 210 Ratings min typ max ±10 --1.4 Unit µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --4V VIN PW=10µs D.C.≤1% ID= --1A RL=10Ω VDD= --10V D VOUT G 2SJ658 P.G 50Ω S --2.5V --2.0 ID -- VDS --1. 8V --1 .5V --10V --4.0V -3.0V --4.0 ID -- VGS VDS= --10V --3.5 --3.0 --2.5 --2.0 --1.5 --1.6 Drain Current, ID -- A --1.2 --0.8 VGS= --1.0V Drain Current, ID -- A 75° Ta= 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.0 --0.5 --0.4 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --1.2 --1.4 --1.6 --1.8 --2.0 Drain-to-Source Voltage, VDS -- V IT02753 Gate-to-Source Voltage, VGS -- V 25 °C --25 °C C IT02754 No.7552-2/4 2SJ658 400 RDS(on) -- VGS Ta=25°C 400 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 350 300 250 200 150 100 50 0 --60 ID= --1.0A 250 --0.5A 200 150 100 50 0 0 --2 --4 --6 --8 --10 IT02755 V = --2.5 , V GS --0.5A I D= = --4.0V A, V GS I D= --1.0 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 yfs -- ID Ambient Temperature, Ta -- °C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IT02756 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --10V 25° 1.0 7 5 3 2 Ta = --0.3 --0.4 --0.5 75 25 °C °C --0.6 °C -25 =Ta C 75° Forward Current, IF -- A C 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.01 --0.2 --0.7 --25 °C --0.8 --0.9 --1.0 --1.1 --1.2 Drain Current, ID -- A 1000 7 5 IT02757 1000 SW Time -- ID Diode Forward Voltage, VSD -- V IT02758 Ciss, Coss, Crss -- VDS Ciss VDD= --10V VGS= --4V 7 5 f=1MHz Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 2 3 5 IT02759 Ciss, Coss, Crss -- pF 3 2 td(off) tf 100 7 5 3 2 tr td(on) Coss Crss 10 --1.0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A --4 VGS -- Qg Drain-to-Source Voltage, VDS -- V 2 --10 7 5 IT02760 ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --2A IDP= --8A ID= --2A Drain Current, ID -- A --3 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 DC op