2SJ664

Ordering number : EN8589 2SJ664 P-Channel Silicon MOSFET 2SJ664 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --17 --68 1.65 50 150 --55 to +150 38 --17 Unit V V A A W W °C °C mJ A Note : *1 VDD=30V, L=200µH, IAV=--17A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0V VDS=-100V, VGS=0V VGS= ±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-8A ID=--8A, VGS=-10V ID=--8A, VGS=-4V Ratings min --100 --1 ±10 --1.2 9 15 102 138 136 193 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : J664 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1805QA TS IM TB-00001097 No.8589-1/4 2SJ664 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--50V, VGS=-10V, ID=--17A VDS=--50V, VGS=-10V, ID=--17A VDS=--50V, VGS=-10V, ID=--17A IS=--17A, VGS=0V Ratings min typ 2090 155 108 17 105 185 98 41 7 9 --0.93 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 7513-002 10.2 4.5 Package Dimensions unit : mm 7001-003 10.2 0.2 1.3 4.5 1.3 0.2 9.9 1.5MAX 11.5 8.8 8.8 1.6 20.9 3.0 1.2 1 0.8 2 3 1.2 0 to 0.3 0.4 2.7 (9.4) 11.0 0.8 0.4 2.55 2.55 1 2 3 1.35 1 : Gate 2 : Drain 3 : Source 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2.55 2.55 SANYO : SMP Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --8A RL=6.25Ω VDD= --50V Avalanche Resistance Test Circuit ≥50Ω RG L DUT D VOUT G 0V --10V 50Ω 1.4 VDD 2SJ664 P.G 50Ω S No.8589-2/4 2SJ664 --35 ID -- VDS Tc=25°C --35 ID -- VGS Tc= -25°C 25°C 75 ° C --1.5 --2.0 --30 0V V --1 --6 Drain Current, ID -- A --4V VDS= --10V --30 Drain Current, ID -- A --25 --25 --20 --20 --15 --15 --10 --10 VGS= --3V --5 0 0 --1 --2 --3 --4 --5 --6 --7 IT08780 0 0 --0.5 --1.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 Drain-to-Source Voltage, VDS -- V 300 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 200 25 °C --5 Tc= 7 5° C --25 °C IT08781 RDS(on) -- Tc --4 V ID= --8A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 260 180 160 140 120 100 80 60 40 --50 220 180 = ID --8 A, V = GS 140 Tc=75°C -8A =ID ,V -10 =S G V 100 25°C --25°C 60 20 --2 --3 --4 --5 --6 --7 --8 --9 --10 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID IT08782 --100 7 5 3 2 Case Temperature, Tc -- °C IT08783 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS= --10V 3 2 10 7 5 3 2 = Tc 5°C --2 C 75° Source Current, IS -- A 25° C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 0 --0.3 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Tc=75 ° C 25°C --25°C --0.6 --0.9 --1.2 --1.5 IT08785 Drain Current, ID -- A 5 3 IT08784 5 3 SW Time -- ID td (off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD= --50V VGS= --10V Switching Time, SW Time -- ns Ciss 2 Ciss, Coss, Crss -- pF 2 1000 7 5 3 2 100 7 5 3 2 tf tr td(on) Coss Crss 100 7 10 --0.1 5 2 3 5 7 --1.0 2 3 5 7 --10 2 3 0 --5 --10 --15 --20 --25 --30 IT08787 Drain Current, ID -- A IT08786 Drain-to-Source Voltage, VDS -- V No.8589-3/4 2SJ664 --10 --9 VGS -- Qg VDS= --50V ID= --17A Drain Current, ID -- A 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 ASO IDP= --68A ID= --17A ≤10µs 10µ s 10 0µ s 1m s 10 m 1 DC 00m s op s era tio n Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 30 35 40 45 Operation in this area is limited by RDS(on). Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 --0.1 --0.1 Total Gate Charge, Qg -- nC 2.0 IT08788 60 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V IT08789 PD -- Tc Allowable Power Dissipation, PD -- W 1.65 1.5 50 40 1.0 30 20 0.5 10 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT08735 Case Temperature, Tc -- °C IT08747 Note on usage : Since the 2SJ664 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PS No.8589-4/4