2SJ683

Ordering number : ENA1057 2SJ683 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ683 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --65 --260 50 150 --55 to +150 400 --65 Unit V V A A W °C °C mJ A Note : *1 VDD=--30V, L=100μH, IAV=--65A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=-1mA, VGS=0V VDS=-60V, VGS=0V VGS= ±16V, VDS=0V Ratings min --60 --1 typ max Unit V Marking : J683 μA ±10 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30508QA TI IM TC-00001244 No. A1057-1/4 2SJ683 Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=-10V, ID=--1mA VDS=-10V, ID=-33A ID=-33A, VGS=-10V ID=-33A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-30V, VGS=--10V, ID=-65A VDS=-30V, VGS=--10V, ID=-65A VDS=-30V, VGS=--10V, ID=-65A IS=--65A, VGS=0V Ratings min --1.2 39 65 8.0 10.5 15500 1000 800 110 620 900 580 290 50 50 -0.9 --1.5 10.5 15 typ max --2.6 Unit V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7002-001 8.2 7.8 6.2 3 8.4 10.0 0.4 0.2 0.6 4.2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 2.5 0.7 1 : Gate 2 : Source 3 : Drain SANYO : ZP Switching Time Test Circuit Avalanche Resistance Test Circuit VIN 0V --10V VIN VDD= --30V ID= --33A RL=0.9Ω VOUT ≥50Ω RG L D PW=10μs D.C.≤1% 2SJ683 0V --10V 50Ω VDD G 2SJ683 P.G 50Ω S No. A1057-2/4 2SJ683 --130 --120 --110 --100 ID -- VDS --8 V Tc=25°C --130 ID -- VGS VDS= --10V --4 --6 V V --120 --110 --100 Drain Current, ID -- A --1 0V --90 --80 --70 --60 --50 --40 --30 --20 --10 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 Drain Current, ID -- A --90 --80 --70 --60 --50 VGS= --3V --30 --20 --10 0 0 --0.5 --1.0 --1.5 75 °C --2.0 25° C --2.5 --40 --25 --3.0 Tc = °C --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 30 28 IT13297 25 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT13298 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 --1 --2 --3 --4 --5 --6 --7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --33A Single pulse Single pulse 20 15 Tc=75°C 25°C --25°C 10 A --33 I D= 4V, 33A = -= -, ID GS V 10V = -VGS 5 --8 --9 --10 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 3 IT13299 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 0 ⏐yfs⏐ -- ID Case Temperature, Tc -- °C IT13300 IS -- VSD VGS=0V Single puls Forward Transfer Admittance, ⏐yfs⏐ -- S 2 100 7 5 3 2 10 7 5 3 2 VDS= --10V Tc= 75° C --0.2 --0.4 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 3 2 5 7--100 2 3 IT13301 25° C --25° C --0.6 --0.8 °C 25 Tc -25 =- °C °C 75 Source Current, IS -- A --1.0 --1.2 IT13302 SW Time -- ID td(off) VDD= --30V VGS= --10V 3 2 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF 1000 7 5 3 2 10000 7 5 3 2 tf tr td(on) 100 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT13303 1000 7 5 3 0 --5 --10 Coss Crss --15 --20 --25 --30 IT13304 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A1057-3/4 2SJ683 --10 --9 VGS -- Qg VDS= --30V ID= --65A Gate-to-Source Voltage, VGS -- V 7 5 3 2 ASO IDP= --260A ≤10μs 10 --8 10 ID= --65A μs Drain Current, ID -- A --7 --6 --5 --4 --3 --2 --1 0 0 50 100 150 200 250 300 IT13305 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 0μ 10 10 Operation in this area is limited by RDS(on). 1m s ms s DC s 0m er ati on op --0.1 --0.1 Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC 60 PD -- Ta Avalanche Energy derating factor -- % Drain-to-Source Voltage, VDS -- V 120 5 7 --100 IT13306 EAS -- Ta Allowable Power Dissipation, PD -- W 50 100 40 80 30 60 20 40 10 20 0 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C IT13307 Ambient Temperature, Ta -- °C Note on usage : Since the 2SJ683 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice. PS No. A1057-4/4