2SK2349

Ordering number : EN5315A N-Channel Silicon MOSFET 2SK2349 High-Voltage, High-Speed Switching Applications Features • Low ON resistance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). Package Dimensions unit: mm 2131-TO-3JML [2SK2349] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions 1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML PW≤10µs, duty cycle≤1% Tc=25°C Ratings 1500 ±30 10 20 4.6 160 150 –55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to Source Leak Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=1500V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=5A ID=5A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 1500 typ max 1.0 ±100 3.5 4.0 1.5 2900 400 200 2.5 Unit V mA nA V S Ω pF pF pF 1.5 2.0 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 72597TS (KOTO) TA-1033 No.5315-1/4 2SK2349 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Symbol td(on) tr td(off) tf VSD trr Conditions Ratings min typ 45 150 800 200 1.0 max Unit ns ns ns ns V µs ID=5A, VGS=10V, VDD=200V, RGS=50Ω IS=10A, VGS=0 IS=10A, di/dt=100A/µs 1.5 2.0 Switching Time Test Circuit 10 I D - VDS 6V 5V 4.5V 20 I D - VDS S VG =1 0V 6V 8 16 Drain Current, I D – A 6 VG S = V 10 Drain Current, I D – A 12 5V 4V 4 8 2 3.5V 4V 4 3V 0 0 4 8 12 16 20 0 0 10 20 30 40 3V 50 16 Drain-to-Source Voltage, VDS – V I D - VGS VDS =20V 20 Drain-to-Source Voltage, VDS – V I D - Tc VG S =10V Tc=-25°C 16 Drain Current, I D – A 25°C Drain Current, I D – A 12 75°C 8 12 VD 8 S =2 0V 4 10V 4 0 0 2 4 6 8 10 12 14 0 -80 -40 Gate-to-Source Voltage, VGS – V Case Temperature, Tc – °C 0 40 80 120 160 No.5315-2/4 2SK2349 3.6 3.2 VGS(off) - Tc VDS =10V ID =1mA 3 2 SW Time - I D VDD =200V VGS =10V P.W.= 1µs D.C.≤0.5% Switching Time, SW Time – ns Cutoff Voltage, VGS(off) – V 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 -80 -40 0 40 80 120 160 1000 7 5 3 2 100 7 5 3 2 7 0.1 2 3 5 7 1.0 t d(off) tf tr t d(on) 2 3 5 7 10 2 2.6 Case Temperature, Tc – °C R DS(on) - VGS Static Drain-to-Source ON-State Resistance, RDS (on) – Ω ID =5A Tc=25°C 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 Drain Current, ID – A R DS(on) - Tc ID =5A Static Drain-to-Source ON-State Resistance, RDS (on) – Ω 2.2 1.8 VD S =1 0V 20 V 1.4 1.0 0 2 4 6 8 10 12 14 0 -80 -40 Gate-to-Source Voltage, VGS – V 3 Case Temperature, Tc – °C 0 40 80 120 160 | yf s | - I D Forward Transfer Admittance, | yfs | – S Tc =25°C 2 10 7 5 3 2 | yf s | - I D VD S =20V VG S =10V 25°C Forward Transfer Admittance, | yfs | – S 2 10 7 5 VDS =10V 20V Tc= °C –25 75° C 3 2 1.0 7 5 3 2 7 0.1 2 3 5 7 1.0 2 3 1.0 7 5 3 2 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 5 7 10 2 3 Drain Current, ID – A 2 10000 7 Drain Current, ID – A VG S =0 f= 1MHz 5 Ciss,Coss,Crss - VDS ASO 10µs Ciss,Coss,Crss – pF 5 3 2 1000 7 5 3 2 100 Drain Current, ID – A Ciss ,,,,,,,,, ,,,,,,,,, ID 10,,,,,,,,, ,,,,,,,,, 7 ,,,,,,,,, 5 ,,,,,,,,, 3 3I DP 2 2 1.0 Operation in this area 7 is limited by RDS(on). 5 3 2 0.1 Tc =25°C 7 Single pulse 5 2 3 10 10 1m 10 ms s 0µ s DC op 10 0m er ati on s Coss Crss 0 4 8 12 16 20 24 28 32 5 7 100 2 3 5 7 1000 2 Drain-to-Source Voltage, VDS – V Drain-to-Source Voltage, VDS – V No.5315-3/4 2SK2349 5 P D - Ta Allowable Power Dissipation, PD – W 200 P D - Tc Allowable Power Dissipation, PD – W 4.6 4 160 3 No he at 120 sin k 2 80 1 40 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – °C Case Temperature, Ta – °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property lose. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1997. Specifications and information herein are subject to change without notice. No.5315-4/4