2SK2624LS

Ordering number:ENN5404B N-Channel Silicon MOSFET 2SK2624LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg. Package Dimensions unit:mm 2078B [2SK2624LS] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C 2.55 2.55 Conditions 2.4 0.6 1.2 1 : Gate 2 : Drain 3 : Source SANYO : TO220FI-LS Ratings 600 ±30 3 12 2.0 25 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.8A VGS=15V, ID=1.8A VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 3.5 1.0 2.0 2.0 550 165 85 2.6 Conditions Ratings min 600 1.0 ±100 5.5 typ max Unit V mA nA V S Ω pF pF pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2000TS (KOTO) TA-2884 No.5404–1/4 2SK2624LS Continued from preceding page. Parameter Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol Qg td(on) tr td(off) tf VSD Conditions VDS=200V, VGS=10V, ID=3A See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=3A, VGS=0 Ratings min typ 15 17 17 40 22 0.98 1.2 max Unit nC ns ns ns ns V Switching Time Test Circuit VDD=200V ID=1.8A RL=111Ω VGS=15V PW=1µs D.C.≤0.5% D VOUT G P.G RGS 50Ω 2SK2624LS S 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 ID -- VDS 15V 5.0 ID -- VGS VDS=10V Tc=--25°C 4.5 4.0 Drain Current, ID – A Drain Current, ID – A 3.5 3.0 2.5 2.0 1.5 1.0 25°C 75°C 8V V 10 7V VGS=6V 4 5 6 7 8 9 10 0.5 0 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS – V 4.0 IT01020 Gate-to-Source Voltage, VGS – V 7.0 6.5 6.0 IT01021 RDS(on) -- VGS Tc=25°C RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) – Ω Static Drain-to-Source On-State Resistance, RDS(on) – Ω 3.5 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --50 --25 0 25 50 75 100 125 150 3.0 2.5 ID=3.0A 1.8A 2.0 1.0A 1.5 0V =1 GS ,V 5V .8A =1 =1 S ID VG , .8A =1 ID 1.0 0 2 4 6 8 10 12 14 16 18 20 Gate-to-Source Voltage, VGS – V IT01022 Case Temperature, Tc – ˚C IT01023 No.5404–2/4 2SK2624LS 10 yfs -- ID VDS=10V Cutoff Voltage, VGS(off) – V 6 VGS(off) -- Tc VDS=10V ID=1mA Forward Transfer Admittance, | yfs | – S 7 5 3 2 5 4 1.0 7 5 3 2 Tc=--25°C 25°C 3 75°C 2 1 0.1 0.1 2 3 Drain Current, ID – A 5 7 1.0 2 3 5 10 IT01024 7 0 --50 --25 0 25 50 75 100 125 150 Case Temperature, Tc – ˚C 100 7 IT01025 Forward Current, IF – A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Switching Time, SW Time – ns 100 7 5 3 2 IF -- VSD VGS=0 SW Time -- ID td(off) tf VDD=200V VGS=15V 5 3 2 td(on) tr 10 7 5 3 2 0.01 7 5 3 2 0.001 0 75° C 25 ° C --25 °C Tc= 1.0 0.3 0.6 0.9 1.2 1.5 IT01026 100 7 5 3 2 5 7 1.0 2 3 5 IT01027 Diode Forward Voltage, VSD – V 1000 7 5 Drain Current, ID – A Ciss, Coss, Crss -- VDS Ciss f=1MHz Forward Bias A S O IDP=12A ID=3A