2SK2628FS

Ordering number : ENA1323 2SK2628FS SANYO Semiconductors DATA SHEET 2SK2628FS Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-reisitance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Conditions Ratings 600 ±30 7 6.2 24 2.0 35 150 --55 to +150 98 6 Unit V V A A A W W °C °C mJ A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=5mH, IAV=6A *5 L≤5mH, Single pulse Marking : K2628 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2208QB MS IM TC-00001661 No. A1323-1/5 2SK2628FS Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg VSD Conditions ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A ID=2A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=6A IS=6A, VGS=0V 3.5 2.0 4.0 0.9 1050 320 180 23 35 90 35 30 0.85 1.2 1.1 Ratings min 600 1.0 ±100 5.5 typ max Unit V mA nA V S Ω pF pF pF ns ns ns ns nC V Package Dimensions unit : mm (typ) 7528-001 10.16 3.18 3.3 4.7 2.54 15.8 3.23 15.87 6.68 2.76 1.47 MAX 0.8 1 2 3 12.98 0.5 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS 2.54 2.54 Switching Time Test Circuit VDD=200V ID=4A RL=50Ω VGS=15V PW=1μs D.C.≤0.5% D G RGS 50Ω S VOUT Avalanche Resistance Test Circuit L ≥50Ω RG 15V 0V 2SK2628FS 2SK2628FS 50Ω VDD P.G No. A1323-2/5 2SK2628FS 10 9 8 ID -- VDS 15V V 10 8V 12 ID -- VGS VDS=10V Tc= --25°C 10 25°C Drain Current, ID -- A 8 Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 2 4 6 75°C 6 7V 4 2 VGS=6V 8 10 12 IT03674 3.0 0 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V 1.4 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc IT03675 Tc=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.3 2.5 4A 1.2 ID=6A 2.0 1.1 1.5 2A 1.0 1.0 A =2 ID A V, 0 =2 =1 , ID GS 15V V = S VG 0.9 0.5 0.8 0 2 4 6 8 10 12 14 16 18 20 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID IT03676 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Case Temperature, Tc -- °C IS -- VSD IT03677 Forward Transfer Admittance, | yfs | -- S 7 5 VDS=10V VGS=0V 2 1.0 7 5 3 2 0.1 0.1 Source Current, IS -- A 3 °C -25 =Tc °C 75 °C 25 2 3 5 7 1.0 2 3 5 7 10 2 IT03678 0.01 7 5 3 2 0.001 0 0.3 Tc= 75°C 25°C --25° C 0.6 0.9 1.2 1.5 IT03679 3 2 Ciss, Coss, Crss -- VDS Drain Current, ID -- A Diode Forward Voltage, VSD -- V 10 VGS -- Qg f=1MHz Gate-to-Source Voltage, VGS -- V VDS=200V ID=6A 8 Ciss Ciss, Coss, Crss -- pF 1000 7 5 3 2 6 Coss Crss 4 100 7 5 0 5 10 15 20 25 30 IT03680 2 0 0 5 10 15 20 25 30 IT03681 Drain-to-Source Voltage, VDS -- V Total Gate Charge, Qg -- nC No. A1323-3/5 2SK2628FS 1000 7 SW Time -- ID VDD=200V Switching Time, SW Time -- ns 5 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=24A IDC=7A IDpack=6.2A 10 m PW≤10μs 10 10 μs Drain Current, ID -- A 3 2 1m s 0μ s s 10 td(off) 100 7 5 3 2 10 0.1 DC op er ati tf tr td(on) 2 3 5 7 1.0 2 3 5 7 10 2 3 Operation in this area is limited by RDS(on). on 0m s 0.01 0.1 Tc=25°C Single pulse 23 5 7 1.0 23 5 7 10 23 5 7 100 23 Drain Current, ID -- A 2.5 PD -- Ta IT03682 40 Drain-to-Source Voltage, VDS -- V PD -- Tc 57 1000 IT14036 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 35 30 25 20 15 10 5 0 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT03684 Case Temperature, Tc -- °C IT03685 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C No. A1323-4/5 2SK2628FS Note on usage : Since the 2SK2628FS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A1323-5/5