2SK3097LS

Ordering number : EN8626 2SK3097LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3097LS Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 400 ±30 6.5 26 2.0 30 150 --55 to +150 120.7 6.5 Unit V V A A W W °C °C mJ A *1 VDD=50V, L=5mH, IAV=6.5A *2 L≤5mH, single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0V VDS=320V, VGS=0V VGS= ±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=3.5A, VGS=15V Ratings min 400 1.0 ±100 3.0 1.8 3.6 0.68 0.87 4.0 typ max Unit V mA nA V S Ω Marking : K3097 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806QB SY IM TC-00000314 No.8626-1/3 2SK3097LS Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V Ratings min typ 860 230 110 15 20 60 35 27 0.9 1.2 max Unit pF pF pF ns ns ns ns nC V Note : Be careful in handling the 2SK3097LS because it has no protection diode between gate and source. Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 4.5 2.8 3.5 7.2 16.0 16.1 0.9 1.2 0.75 3.6 1.2 14.0 0.7 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 2.55 2.55 Switching Time Test Circuit VDD=200V 0.6 Avalanche Resistance Test Circuit L DUT ≥50Ω VGS=15V PW=10µs D.C.≤0.5% D ID=3.5A RL=57.1Ω VOUT 15V 0V 50Ω VDD G P.G RGS 50Ω S 2SK3097LS No.8626-2/3 2SK3097LS 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 ASO IDP=26A