2SK3280

Ordering number:ENN6436 N-Channel Silicon MOSFET 2SK3280 DC/DC Converter Applications Features · Low ON-resistance. · 4V drive. · Ultrahigh-speed switching. Package Dimensions unit:mm 2083B [2SK3280] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SK3280] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.5 0.8 2 3 2.5 1.2 0 to 0.2 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60800TS (KOTO) TA-2615 No.6436–1/4 2SK3280 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Conditions Ratings 30 ±20 20 45 1 30 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V ID=10A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=20A VDS=10V, VGS=10V, ID=20A VDS=10V, VGS=10V, ID=20A IS=20A, VGS=0 1.0 12 18 15 22 1000 410 160 11 210 80 85 17 3.3 1.7 1.0 1.2 20 31 Conditions Ratings min 30 1 ±10 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=15V VIN 10V 0V VIN PW=10µs D.C.≤1% ID=10A RL=1.5Ω D VOUT G P.G 50Ω 2SK3280 S No.6436–2/4 2SK3280 10 ID -- VDS 6.0V 4.5V 3.5 V 20 18 ID -- VGS VDS=10V 9 8 8.0V 3. 0V 16 Drain Current, ID – A 7 Drain Current, ID – A 14 12 10 8 6 4 2 0 10.0V 6 5 4 3 2 1 0 0 VGS=2.5V Tc= 7 0 0.5 1.0 1.5 2.0 5°C --2 5 2.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 °C 25°C 3.0 3.5 4.0 Drain-to-Source Voltage, VDS – V 60 55 IT01822 Gate-to-Source Voltage, VGS – V 60 IT01823 RDS(on) -- VGS Tc=25°C Static Drain-to-Source On-State Resistance, RDS (on) – mΩ RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 50 10A 40 30 ID=4A 20 =4A .5V, I D S=4 VG 10A .0V, I D= V GS=10 10 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS – V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 2 3 5 IT01824 Case Temperature, Tc – ˚C 100 7 5 3 2 IT01825 yfs -- ID VDS=10V IF -- VSD VGS=0 Forward Transfer Admittance, | yfs | – S Forward Current, IF – A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 °C --25 Tc= C 75° 25 °C Drain Current, ID – A 1.0 7 10 IT01826 0.01 7 5 3 2 0.001 0.2 75° C 25° C 0.5 0.3 0.4 --25 ° 0.6 0.7 Tc= C 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD – V 10 IT01827 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 5 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS – V VGS -- Qg VDS=10V ID=20A 9 8 7 6 5 4 3 2 1 10 15 20 25 30 IT01828 0 0 Ciss, Coss, Crss – pF Ciss Coss Crss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 IT01829 Drain-to-Source Voltage, VDS – V Total Gate Charge, Qg – nC No.6436–3/4 2SK3280 1000 7 5 SW Time -- ID VDD=15V VGS=10V td(off) tf Switching Time, SW Time – ns 3 100 7 5 3 2 ASO IDP=45A