2SK3352

2SK3352 P- Channel Silicon MOS FET DC-DC Converter Features and Applications • Low ON-state resistance. • Very high - speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% Allowable power Dissipation PD Tc=25°C Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source on State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Marking : K3352 Package Dimensions SMP-FD (unit : mm) 0.9 10.2 4 4.5 1.3 TENTATIVE Tch Tstg 30 ±20 45 80 1.65 40 150 --55 to +150 min unit V V A A W W °C °C typ max 1 ±10 2.4 27 11 15 1400 420 210 14 530 100 150 28 4.6 5 1.0 15 21 unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA , VDS=30V , VGS=±16V , VDS=10V , VDS=10V , ID=20A , ID=10A , VDS=10V , VDS=10V , VDS=10V , VGS=0 VGS=0 VDS=0 ID=1mA ID=20A VGS=10V VGS=4.5V f=1MHz f=1MHz f=1MHz 30 1.0 19 See specified Test Circuit VDS=10V, VGS=10V, ID=20A IS=45A , VGS= 0 1.2 SMP-FA (unit : mm) 0.9 10.2 4 8.8 4.5 SMP(unit:mm) 10.2 0.9 1.3 4 30° 30° 4.5 1.3 1.5max 8.8 9.9 11.5 9.9 1.4 2.0 2.5 20.9 1.6 3.0 4.5 1.35 2.55 1.2 2.55 1 2 3 2.7 9.4 0.8 11.0 1 0.8 2 3 0to0.3 0.4 1.2 0.8 0.4 1.5 1.2 8.8 0.4 2.55 2.55 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.7 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain Specifications and information herin are subject to change without notice. 2.55 2.55 SANYO Electric Co., Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 990915TM2fXHD 2SK3352 TENTATIVE Switching Time Test Circuit VIN 10V 0V VIN PW=10µS D.C.≤1% VDD=15V ID=20A RL=0.75Ω D VOUT G 2SK3352 P.G 50Ω S 990915TM2fXHD