2SK3352_05

Ordering number : ENN8125 2SK3352 2SK3352 Features • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC converter applications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Conditions Ratings 30 ±20 45 80 1.65 40 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=20A ID=20A, VGS=10V ID=10A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 ±10 1.0 19 27 11 15 1400 420 210 14 530 100 150 15 21 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : K3352 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005QA MS IM TA-2658 No.8125-1/4 2SK3352 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=20A VDS=10V, VGS=10V, ID=20A VDS=10V, VGS=10V, ID=20A IS=45A, VGS=0V Ratings min typ 28 4.6 5 1.0 1.2 max Unit nC nC nC V Package Dimensions unit : mm 7513-002 10.2 0.2 Package Dimensions unit : mm 7001-003 4.5 1.3 10.2 0.2 4.5 1.3 11.5 8.8 9.9 1.5MAX 1.6 8.8 20.9 1.2 11.0 (9.4) 3.0 1 0.8 2 3 1.2 0 to 0.3 0.4 2.7 0.8 0.4 2.55 2.55 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 1.35 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2.55 2.55 SANYO : SMP Package Dimensions unit : mm 7042-001 10.2 4.5 1.3 0.8 Switching Time Test Circuit VDD=15V 10V 0V VIN VIN ID=20A RL=0.75Ω 9.9 8.8 PW=10µs D.C.≤1% D G VOUT 2.0 1.6 2.5 4.5 1 2 3 1.2 P.G 50Ω S 0.8 2.55 1.5 2SK3352 2.55 0.4 2.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FA 1.4 No.8125-2/4 2SK3352 10.0V 8.0V 6.0V 4.5V 12 ID -- VDS 3.5V 3.0V 16 14 ID -- VGS VDS=10V 10 Drain Current, ID -- A 8 Drain Current, ID -- A VGS=2.5V 10 8 6 4 2 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 50 IT02766 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 30 Tc=75 °C 25°C --25°C 12 IT02767 RDS(on) -- Tc Tc=25°C ID=20A 10A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 25 20 15 I D= , VG 10A 4.5 S= V 0A I D=2 10 =10V , VGS 5 0 --75 --50 --25 0 25 50 75 100 125 150 175 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 yfs -- ID IT07199 100 7 5 3 2 Case Temperature, Tc -- °C IT07200 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=10V 25 °C Tc= 7 0.1 7 5 3 2 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 2 3 5 7 10 23 Drain Current, ID -- A 1000 7 5 IT02770 10000 7 5 3 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V --25° C 25°C = Tc --2 C 5° °C 75 Source Current, IS -- A 10 7 5 3 2 1.0 7 5 3 2 5°C IT02771 VDS=15V VGS=10V td(off) Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Ciss, Coss, Crss -- pF 2 Ciss 1000 7 5 3 2 100 7 5 0 5 10 15 20 25 30 IT02773 tf tr Coss Crss td(on) Drain Current, ID -- A IT02772 Drain-to-Source Voltage, VDS -- V No.8125-3/4 2SK3352 10 9 VGS -- Qg VDS=10V ID=20A Drain Current, ID -- A 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=80A ID=45A