2SK3597-01

2SK3597-01 FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C Tch Tstg Ratings 200 170 ±45 ±4.3 ** ±180 ±30 45 258.9 20 5 270 2.4 ** +150 -55 to +150 Unit V V A A A V A mJ kV/µs kV/µs W Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source °C °C ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Ta=25°C *1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch