2SK3702JS

Ordering number : ENA0632 2SK3702JS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3702JS Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Pb-free type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 18 72 2.0 20 150 --55 to +150 23 18 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=100µH, IAV=18A *2 L≤100µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=9A ID=9A, VGS=10V ID=9A, VGS=4V Ratings min 60 1 ±10 1.2 8 12 42 60 55 85 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : K3702 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1306QA TI IM TC-00000378 No. A0632-1/5 2SK3702JS Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=18A VDS=30V, VGS=10V, ID=18A VDS=30V, VGS=10V, ID=18A IS=18A, VGS=0V Ratings min typ 775 125 105 11 65 75 70 19 2.5 4.1 0.98 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7525-002 10.0 3.5 4.5 2.8 3.2 16.0 3.6 7.2 1.6 1.2 14.0 0.75 123 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS) 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN ID=9A RL=3.33Ω VDD=30V 2.4 Avalanche Resistance Test Circuit L ≥50Ω 2SK3702JS 10V 0V 50Ω VDD D PW=10µs D.C.≤1% VOUT G 2SK3702JS P.G 50Ω S No. A0632-2/5 2SK3702JS 40 ID -- VDS 10 V 6V --25° C Tc=25°C 30 ID -- VGS VDS=10V 35 8V Drain Current, ID -- A Drain Current, ID -- A 20 25 4V 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 15 10 =7 0 0 1 2 --2 5 Tc 5° C VGS=3V 5 °C 25 ° C 3 25° C 30 Tc= 4 25 75 ° C 5 6 IT06198 Drain-to-Source Voltage, VDS -- V 140 IT06197 140 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc ID=9A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 100 80 80 60 Tc= 75°C 25°C --25°C 60 9A , I D= = 4V V GS =10V VGS 9A, I D= 40 40 20 0 2 3 4 5 6 7 8 9 10 IT06199 20 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 2.5 Case Temperature, Tc -- °C 5 IT06200 VGS(off) -- Tc yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S VDS=10V ID=1mA Cutoff Voltage, VGS(off) -- V 2.0 3 2 1.5 10 7 5 3 2 Tc = C 25° 5°C --2 C 7 5° 1.0 0.5 0 --50 1.0 --25 0 25 50 75 100 125 150 2 3 5 7 1.0 2 3 5 7 10 2 3 Case Temperature, Tc -- °C 100 7 5 3 2 IT06201 1000 7 5 IS -- VSD VGS=0V Switching Time, SW Time -- ns Drain Current, ID -- A IT06202 SW Time -- ID VDD=30V VGS=10V Source Current, IS -- A 10 7 5 3 2 3 2 100 7 5 3 2 10 7 5 0.1 td(off) Tc= 75°C 25°C --25°C 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 tf tr td(on) 0.6 0.9 1.2 1.5 IT06203 2 3 5 7 1.0 2 3 5 7 10 2 3 Diode Forward Voltage, VSD -- V Drain Current, ID -- A 5 7 100 IT06204 No. A0632-3/5 2SK3702JS 3 2 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V 10 9 8 7 6 5 4 3 2 1 0 VGS -- Qg VDS=30V ID=18A Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss Coss 100 7 5 0 5 10 15 20 25 30 IT06205 Crss 0 5 10 15 20 IT06206 Drain-to-Source Voltage, VDS -- V 2 100 7 5 Total Gate Charge, Qg -- nC 2.5 ASO PD -- Ta Drain Current, ID -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 10 10 µs Allowable Power Dissipation, PD -- W IDP=72A PW