2SK3703

Ordering number : EN7681A 2SK3703 SANYO Semiconductors DATA SHEET 2SK3703 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 30 120 2.0 25 150 --55 to +150 135 30 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=200µH, IAV=30A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=15A ID=15A, VGS=10V ID=15A, VGS=4V Ratings min 60 1 ±10 1.2 13 22 20 28 26 40 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : K3703 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72506QA MS IM TC-00000067 / 61504 TS IM TA-100813 No.7681-1/5 2SK3703 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=30A VDS=30V, VGS=10V, ID=30A VDS=30V, VGS=10V, ID=30A IS=30A, VGS=0V Ratings min typ 1780 266 197 16.5 110 166 144 40 6.5 11.5 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7508-003 Switching Time Test Circuit VDD=30V 10.0 3.2 3.5 7.2 4.5 2.8 VIN 10V 0V VIN ID=15A RL=2Ω 16.0 PW=10µs D.C.≤1% D VOUT 18.1 G 1.6 1.2 0.75 14.0 0.7 5.6 2SK3703 P.G 50Ω S 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 2.55 2.55 Avalanche Resistance Test Circuit L ≥50Ω 2SK3703 10V 0V 50Ω VDD No.7681-2/5 2SK3703 50 45 40 ID -- VDS 10 V 6V Tc= --25 °C 75 ° C 1.5 2.0 45 4V 8V 40 Drain Current, ID -- A 35 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain Current, ID -- A 35 30 25 20 10 5 0 0 0.5 1.0 25 °C 2.5 Tc= 75 --25 °C °C VGS=3V 15 3.0 3.5 4.0 4.5 25 ° C 5.0 IT05387 150 IT05389 1.2 IT05391 30 IT05393 Tc=25°C 50 ID -- VGS VDS=10V Drain-to-Source Voltage, VDS -- V 70 IT05386 60 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc ID=15A Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 50 50 40 40 30 15 I D= VG A, 4V S= V 30 Tc=75°C 25°C --25°C 15 I D= 20 10 S= A, VG 20 10 0 2 3 4 5 6 7 8 9 10 IT05388 10 0 --50 --25 0 25 50 75 100 125 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID Case Temperature, Tc -- °C 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 10 7 5 3 2 1.0 7 5 0.1 = Tc --2 C 25° 5°C C 75° 0.01 7 5 3 2 0.001 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 0.3 0.6 0.9 Drain Current, ID -- A 5 3 IT05390 5 3 2 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD=30V VGS=10V Switching Time, SW Time -- ns 100 7 5 tf Ciss, Coss, Crss -- pF 2 td(off) 1000 7 5 3 2 tr 3 2 td(on) 100 7 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 5 10 15 20 25 10 0.1 Drain Current, ID -- A IT05392 Drain-to-Source Voltage, VDS -- V Tc= 7 Coss Crss 5°C 25° C --25° C 2 Source Current, IS -- A 3 No.7681-3/5 2SK3703 10 9 VGS -- Qg VDS=30V ID=30A Drain Current, ID -- A 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=120A ID=30A DC Gate-to-Source Voltage, VGS -- V