2SK3748

Ordering number : ENN8250A 2SK3748 2SK3748 Features • • • • N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID* IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 1500 ±20 4 8 3.0 65 150 --55 to +150 170 4 Unit V V A A W W °C °C mJ A *Shows chip capability *1 VDD=99V, L=20mH, IAV=4A *2 L≤20mH, single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0V VDS=1200V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=20V, ID=2A ID=2A, VGS=10V Ratings min 1500 100 ±10 2.5 1.7 2.8 5 7 3.5 typ max Unit V µA µA V S Ω Marking : K3748 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72905 MS IM TB-00001688 / 31005QB TS IM TB-00001272 No.8250-1/4 2SK3748 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Reverse Recovery Time Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Conditions VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=4A VDS=200V, VGS=10V, ID=4A VDS=200V, VGS=10V, ID=4A IS=4A, VGS=0V IS=4A, VGS=0V, dis/dt=100A/µs Ratings min typ 790 140 70 17 75 360 116 80 6.4 36 0.94 340 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V ns Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions unit : mm 7505-003 16.0 3.4 5.6 3.1 5.0 8.0 21.0 22.0 4.0 2.8 2.0 20.4 1.0 0.6 1 2 3 3.5 5.45 5.45 Switching Time Test Circuit VIN 10V 0V VIN PW=10µs D.C.≤0.5% VDD 200V ID=2A RL=100Ω 2.0 2.0 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML Avalanche Resistance Test Circuit ≥50Ω RG L D VOUT 2SK3748 10V 0V 50Ω VDD G 2SK3748 P.G RGS 50Ω S No.8250-2/4 2SK3748 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 IT09205 16 ID -- VDS Tc=25°C 10V 7 ID -- VGS VDS=20V 8V 6 Tc= --25°C 6V Drain Current, ID -- A 5 Drain Current, ID -- A 4 5V 25°C 75°C 3 2 VGS=4V 1 0 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V 14 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT09206 RDS(on) -- Tc ID=2A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 12 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 14 12 10 8 6 4 2 0 --50 ID=2A VGS=10V 10 8 Tc=75°C 25°C --25°C 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 7 yfs -- ID IT09207 2 10 7 5 Case Temperature, Tc -- °C IT09208 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 5 3 2 VDS=20V C 25° Source Current, IS -- A °C --25 Tc= C 75° 3 2 1.0 7 5 3 2 1.0 7 5 3 2 3 2 0.01 2 3 5 7 1.0 2 3 5 7 0 0.3 0.1 0.1 Tc= 75°C 25°C --25°C 0.6 0.1 7 5 0.9 1.2 1.5 IT09210 Drain Current, ID -- A 1000 7 IT09209 10000 7 5 3 2 SW Time -- ID td(off) VDD=200V VGS=10V Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 Ciss, Coss, Crss -- pF 100 7 5 3 2 tf 1000 7 5 3 2 100 7 5 3 2 10 Ciss Coss Crss tr td(on) 2 3 5 7 2 3 IT09211 10 0.1 1.0 0 5 10 15 20 25 30 35 40 45 50 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V IT09212 No.8250-3/4 2SK3748 10 9 VGS -- Qg VDS=200V ID=4A Drain Current, ID -- A 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=8A