2SK3815

Ordering number : EN8053A 2SK3815 SANYO Semiconductors DATA SHEET 2SK3815 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 23 92 1.65 40 150 --55 to +150 19.8 23 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=50µH, IAV=23A *2 L≤50µH, single pulse Marking : K3815 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2807 TI IM TC-00001041 / 93004QA TS IM TB-00000601 No.8053-1/5 2SK3815 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=12A ID=12A, VGS=10V ID=12A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=23A VDS=30V, VGS=10V, ID=23A VDS=30V, VGS=10V, ID=23A IS=23A, VGS=0V Ratings min 60 1 ±10 1.2 9 15 42 60 775 125 105 11 85 72 78 19 2.5 4.1 1.04 1.5 55 85 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7513-002 10.2 0.2 Package Dimensions unit : mm (typ) 7001-003 4.5 0.2 1.3 10.2 4.5 1.3 9.9 1.5MAX 11.5 8.8 8.8 1.6 20.9 3.0 1.2 (9.4) 11.0 1 0.8 2 3 1.2 0 to 0.3 0.4 0.8 0.4 2.55 2.55 2.7 1 2 3 1.35 1 : Gate 2 : Drain 3 : Source 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2.55 2.55 SANYO : SMP Switching Time Test Circuit VDD=30V VIN 10V 0V VIN ID=12A RL=2.5Ω Unclamped Inductive Test Circuit ≥50Ω RG L DUT D PW=10µs D.C.≤1% VOUT 15V 0V 50Ω VDD G 2SK3815 P.G 50Ω S 1.4 No.8053-2/5 2SK3815 30 ID -- VDS 10V Tc=25°C 30 ID -- VGS Tc= --25 °C 2 25 25 Drain Current, ID -- A 20 4V Drain Current, ID -- A 20 15 15 5 VGS=3V 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 1 3 4 5 6 IT07801 Drain-to-Source Voltage, VDS -- V 140 IT07800 140 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS ID=12A RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 100 80 80 60 Tc=75°C 60 40 25°C --25°C 12A I D= 4V, = 12A V GS I= 0V, D =1 VGS 40 20 0 2 3 4 5 6 7 8 9 10 IT07802 20 0 --50 --25 °C Tc= 75 ° --25 C °C 10 10 25 25° C 8V 6V 75° C VDS=10V 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 5 Case Temperature, Tc -- °C 100 7 5 3 2 IT07803 ⏐yfs⏐ -- ID IS -- VSD VGS=0V Forward Transfer Admittance, ⏐yfs⏐ -- S 3 2 VDS=10V 10 7 5 3 2 1.0 7 5 3 0.1 2 3 5 7 1.0 °C 25 = Tc 5 --2 °C Source Current, IS -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 °C 75 2 3 5 7 10 2 3 Tc=75 °C 25°C --25°C 0.6 0.9 1.2 1.5 IT07805 Drain Current, ID -- A 1000 7 5 IT07804 3 2 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=30V VGS=10V Switching Time, SW Time -- ns 3 2 100 7 5 3 2 Ciss, Coss, Crss -- pF 1000 Ciss 7 5 3 2 td(off) tf tr Coss Crss td(on) 10 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 7 5 3 0 5 10 15 20 25 30 IT07807 Drain Current, ID -- A IT07806 Drain-to-Source Voltage, VDS -- V No.8053-3/5 2SK3815 10 9 VGS -- Qg VDS=30V ID=23A 2 100 7 5 ASO IDP=92A ID=23A PW≤10µs 10 µs 10 0µ s 1m s 10 10 ms 0m s era tio n Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 5 10 15 20 IT07808 Drain Current, ID -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 DC op Operation in this area is limited by RDS(on). Tc=25°C Single pulse 2 3 5 7 1.0 2 3 0.1 0.1 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.0 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 45 40 35 30 25 20 15 10 5 0 5 7 100 IT07809 PD -- Tc Allowable Power Dissipation, PD -- W 1.65 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Amibient Tamperature, Ta -- °C 120 IT07811 Case Tamperature, Tc -- °C IT07810 EAS -- Ta Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C No.8053-4/5 2SK3815 Note on usage : Since the 2SK3815 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2007. Specifications and information herein are subject to change without notice. PS No.8053-5/5