2SK3820

Ordering number : ENN8147 2SK3820 2SK3820 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 100 ±20 26 104 1.65 50 150 --55 to +150 84.5 26 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=200µH, IAV=26A *2 L≤200µH, single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=13A ID=13A, VGS=10V ID=13A, VGS=4V Ratings min 100 1 ±10 1.2 11 19 45 56 60 80 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : K3820 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61005QA MS IM TB-00000899 No.8147-1/4 2SK3820 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=26A VDS=50V, VGS=10V, ID=26A VDS=50V, VGS=10V, ID=26A IS=26A, VGS=0V Ratings min typ 2150 160 110 20 34 185 62 44 7.8 9.8 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 7513-002 10.2 4.5 Package Dimensions unit : mm 7001-003 10.2 0.2 1.3 4.5 1.3 0.2 9.9 1.5MAX 11.5 8.8 8.8 1.6 20.9 3.0 1.2 1 0.8 2 3 1.2 0 to 0.3 0.4 2.7 (9.4) 11.0 0.8 0.4 2.55 2.55 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 1.35 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2.55 2.55 SANYO : SMP Switching Time Test Circuit VIN 10V 0V VIN PW=10µs D.C.≤1% ID=13A RL=3.85Ω VDD=50V Unclamped Inductive Test Circuit ≥50Ω RG L D VOUT 15V 0V 50Ω 2SK3820 VDD G 2SK3820 P.G 50Ω S 1.4 No.8147-2/4 2SK3820 40 35 ID -- VDS V Tc=25°C 40 ID -- VGS 25°C 5°C 10 35 30 25 20 15 Drain Current, ID -- A 25 20 15 10 Drain Current, ID -- A 30 Tc= 7 VGS=3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Drain-to-Source Voltage, VDS -- V 120 IT07855 130 120 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 25 5 5 °C --25 ° C 10 IT07856 RDS(on) -- Tc ID=13A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 110 100 90 80 70 60 50 40 30 20 2 3 4 5 6 7 8 9 10 IT07857 110 100 90 80 70 60 50 40 30 20 10 0 --50 --25 0 25 50 75 100 125 150 Tc=75°C =1 ID 3 VG A, 4 S= V 25°C --25°C 13 I D= VG A, 10 S= V Gate-to-Source Voltage, VGS -- V 7 yfs -- ID Case Temperature, Tc -- °C 100 7 5 3 2 IT07858 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 5 3 VDS=10V 10 7 5 3 2 1.0 7 5 0.1 °C 25 C 5° --2 = °C Tc 75 Source Current, IS -- A 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Tc=7 5°C 25°C --25°C 0.6 0.9 1.2 25° 75°C C 1.5 IT07860 30 IT07862 6V 4V VDS=10V 8V Drain Current, ID -- A 5 3 IT07859 5 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD=50V VGS=10V Ciss, Coss, Crss -- pF 3 2 Switching Time, SW Time -- ns 2 100 7 5 3 2 1000 7 5 3 2 tf tr td(on) Coss Crss 100 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 5 0 5 10 15 20 25 Drain Current, ID -- A IT07861 Drain-to-Source Voltage, VDS -- V Tc= -- No.8147-3/4 2SK3820 10 9 VGS -- Qg VDS=50V ID=26A Drain Current, ID -- A 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=104A 10 10 µs Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 ID=26A 10 1m m DC 0 s ms op era tio n 10 0µ s s Operation in this area is limited by RDS(on). Tc=25°C Single pulse 2 3 5 7 1.0 2 3 0.1 0.1 5 7 10 2 3 5 7 100 2 Total Gate Charge, Qg -- nC 2.0 IT07863 60 PD -- Ta Allowable Power Dissipation, PD -- W Drain to Source Voltage, VDS -- V IT07864 PD -- Tc Allowable Power Dissipation, PD -- W 1.65 1.5 50 40 1.0 30 20 0.5 10 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT07811 Case Temperature, Tc -- °C IT07822 Note on usage : Since the 2SK3820 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8147-4/4