2SK3823

Ordering number : ENN8241 2SK3823 2SK3823 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 40 160 1.75 45 150 --55 to +150 56 40 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=50µH, IAV=40A *2 L≤50µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=20A ID=20A, VGS=10V ID=20A, VGS=4V Ratings min 60 1 ±10 1.2 16 28 21 29 27.5 41 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : K3823 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005QA TS IM TB-00001199 No.8241-1/4 2SK3823 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=40A VDS=30V, VGS=10V, ID=40A VDS=30V, VGS=10V, ID=40A IS=40A, VGS=0 Ratings min typ 1780 266 197 16.5 160 160 160 40 6.5 11.5 1.08 1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 2052C 10.2 3.6 5.1 4.5 1.3 18.0 5.6 1.2 0.8 123 14.0 15.1 2.7 6.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220 2.55 2.55 Switching Time Test Circuit VDD=30V VIN 10V 0V VIN ID=20A RL=1.5Ω 2.7 Avalanche Resistance Test Circuit L ≥50Ω PW=10µs D.C.≤1% D VOUT 2SK3823 G 10V 0V 2SK3823 50Ω VDD P.G 50Ω S No.8241-2/4 2SK3823 80 70 ID -- VDS 8V 6V Tc=25°C 80 ID -- VGS 25° 2 C 5°C 75 °C 5 6 IT08834 125 150 IT08836 VDS=10V 70 10 V Drain Current, ID -- A Drain Current, ID -- A 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT08833 50 40 30 20 10 0 0 1 2 4V VGS=3V Tc =7 5° C --25 ° 25 °C C 3 4 Drain-to-Source Voltage, VDS -- V 70 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 60 RDS(on) -- Tc ID=20A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 50 40 40 30 , 20A I D= =4V VGS 30 Tc=75°C 20 25°C --25°C 20 0A I D=2 =10V , VGS 10 0 2 3 4 5 6 7 8 9 10 IT08835 10 0 --50 --25 0 25 50 75 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID Case Temperature, Tc -- °C 100 7 5 3 2 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 VDS=10V Forward Current, IF -- A 3 2 °C 25 10 7 5 3 2 1.0 7 5 0.1 5°C --2 = °C Tc 75 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Tc=75 °C 25°C 0.6 --25°C 0.9 Tc= -100 1.2 60 60 1.5 IT08838 Drain Current, ID -- A 5 3 IT08837 5 Diode Forward Voltage, VSD -- V SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz VDD=30V VGS=10V 3 Switching Time, SW Time -- ns 2 100 7 5 tf Ciss, Coss, Crss -- pF 2 Ciss 1000 7 5 3 2 tr 3 2 td(on) Coss Crss 10 7 0.1 100 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 5 10 15 20 25 30 IT08840 Drain Current, ID -- A IT08839 Drain-to-Source Voltage, VDS -- V No.8241-3/4 2SK3823 10 9 VGS -- Qg VDS=30V ID=40A Drain Current, ID -- A 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=160A ID=40A