2SK3825

Ordering number : ENN8242 2SK3825 2SK3825 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 74 296 1.75 75 150 --55 to +150 190 74 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=50µH, IAV=74A *2 L≤50µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=37A ID=37A, VGS=10V ID=37A, VGS=4V Ratings min 60 1 ±10 1.2 27 45 10 13 13 18 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : K3825 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005QA TS IM TB-00001202 No.8242-1/4 2SK3825 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A IS=74A, VGS=0 Ratings min typ 5250 780 525 40 315 370 310 113 19 28 1.13 1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 2052C 10.2 3.6 5.1 4.5 1.3 18.0 5.6 1.2 0.8 123 14.0 15.1 2.7 6.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN PW=10µs D.C.≤1% ID=37A RL=0.81Ω VDD=30V 2.7 Avalanche Resistance Test Circuit L ≥50Ω D VOUT 2SK3825 G 10V 0V 2SK3825 50Ω VDD P.G 50Ω S No.8242-2/4 2SK3825 150 ID -- VDS V8 V 6V Tc=25°C 150 ID -- VGS 5 ° C 25 ° C 75° C 5 6 IT08858 125 150 IT08860 1.4 1.6 IT08862 VDS=10V 125 10 125 Drain Current, ID -- A Drain Current, ID -- A 100 100 75 4V 75 50 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT08857 0 0 1 2 3 4 Drain-to-Source Voltage, VDS -- V 30 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 30 RDS(on) -- Tc ID=37A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 25 20 20 15 Tc=75°C 15 10 25°C --25°C 10 =4V VGS 7A, 3 I D= =10V , VGS 37A I D= 5 5 0 2 3 4 5 6 7 8 9 10 IT08859 0 --50 --25 0 25 °C VGS=3V 25 Tc = 25 25 75 ° --25 C °C 50 75 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID Case Temperature, Tc -- °C 100 7 5 3 2 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 VDS=10V °C Forward Current, IF -- A 3 2 10 7 5 3 2 1.0 7 5 0.1 25 = Tc 5°C --2 °C 75 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 7 100 IT08861 0.4 Tc=75 °C 25°C --25°C 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 10000 7 SW Time -- ID td (off) Ciss, Coss, Crss -- VDS f=1MHz VDD=30V VGS=10V Switching Time, SW Time -- ns Ciss 5 3 5 Ciss, Coss, Crss -- pF 3 2 tf 2 100 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT08863 1000 7 5 3 2 0 5 10 Coss Crss tr td(on) 15 20 Tc= --2 100 1.2 25 30 IT08864 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No.8242-3/4 2SK3825 10 9 VGS -- Qg VDS=30V ID=74A Drain Current, ID -- A 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=296A ID=74A