2SK3826

Ordering number : ENN8243 2SK3826 2SK3826 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 100 ±20 26 104 1.75 45 150 --55 to +150 80 26 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=200µH, IAV=26A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=13A ID=13A, VGS=10V ID=13A, VGS=4V Ratings min 100 1 ±10 1.2 11 19 46 57 60 80 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : K3826 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005QA TS IM TB-00001201 No.8243-1/4 2SK3826 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=26A VDS=50V, VGS=10V, ID=26A VDS=50V, VGS=10V, ID=26A IS=26A, VGS=0 Ratings min typ 2150 160 110 20 34 185 62 42 7.2 9.2 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 2052C 10.2 3.6 5.1 4.5 1.3 18.0 5.6 1.2 0.8 123 14.0 15.1 2.7 6.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN PW=10µs D.C.≤1% ID=13A RL=3.85Ω VDD=50V 2.7 Avalanche Resistance Test Circuit L ≥50Ω D VOUT 2SK3826 G 10V 0V 2SK3826 50Ω VDD P.G 50Ω S No.8243-2/4 2SK3826 50 45 40 ID -- VDS Tc=25°C 10 V 50 ID -- VGS Tc= --25° 25°C C 1.5 2.0 8V 6V Drain Current, ID -- A 4V 45 40 35 30 25 20 Drain Current, ID -- A 35 30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 0 0 0.5 1.0 25 °C VGS=3V 10 2.5 Tc= 75° C --25 °C 15 3.0 3.5 4.0 4.5 75° C 5.0 IT08869 125 150 IT08871 VDS=10V Drain-to-Source Voltage, VDS -- V 120 IT08868 130 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc ID=13A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 110 100 90 80 70 60 50 40 30 20 2 3 4 5 6 7 8 9 10 IT08870 120 110 100 90 80 70 60 50 40 30 20 10 0 --50 --25 0 25 50 75 100 Tc=75°C =1 ID 3A , VG =4 S V 25°C --25°C 13 I D= VG A, 10 S= V Gate-to-Source Voltage, VGS -- V 7 yfs -- ID Case Temperature, Tc -- °C 100 7 5 3 2 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 5 3 VDS=10V Forward Current, IF -- A 2 10 7 5 3 2 1.0 7 5 3 0.1 2 3 5 7 1.0 2 = Tc --2 °C 25 5°C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 75 °C 3 5 7 10 2 3 5 7 Tc=75 °C 25°C --25°C 0.6 0.9 1.2 1.5 IT08873 Drain Current, ID -- A 5 3 IT08872 5 Diode Forward Voltage, VSD -- V SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Ciss VDD=50V VGS=10V Ciss, Coss, Crss -- pF 3 2 Switching Time, SW Time -- ns 2 100 7 5 3 2 1000 7 5 3 2 tf td(on) tr Coss Crss 100 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 5 0 5 10 15 20 25 30 IT08875 Drain Current, ID -- A IT08874 Drain-to-Source Voltage, VDS -- V No.8243-3/4 2SK3826 10 9 VGS -- Qg VDS=50V ID=26A Drain Current, ID -- A 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=104A ID=26A DC Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 10 op era 10 m 0m s s n