2SK3830

Ordering number : ENN8032 2SK3830 N-Channel Silicon MOSFET 2SK3830 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1. VDD=20V, L=50µH, IAV=74A *2. L≤50µH, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 72 288 2.5 85 150 --55 to +150 205 74 Unit V V A A W W °C °C mJ A Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=36A ID=36A, VGS=10V ID=36A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 60 1 ±10 1.2 18 45 12.5 21 3500 500 350 16 27 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : K3830 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2404QA TS IM TB-00000313 No.8032-1/4 2SK3830 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=72A VDS=30V, VGS=10V, ID=72A VDS=30V, VGS=10V, ID=72A IS=72A, VGS=0 Ratings min typ 26 270 250 250 67 10.6 10 1.1 1.5 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2056A 15.6 14.0 3.2 4.8 Switching Time Test Circuit VIN VDD=30V 3.5 2.0 10V 0V VIN ID=36A RL=0.83Ω 2.6 1.2 15.0 20.0 1.3 PW=10µs D.C.≤1% D VOUT 1.6 G 20.0 0.6 2.0 1.0 1 0.6 2 3 2SK3830 P.G 50Ω 1.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB S 5.45 5.45 Unclamped Inductive Circuit ≥50Ω RG L DUT 15V 0V 50Ω VDD 100 90 80 ID -- VDS 8V 90 80 V Drain Current, ID -- A 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain Current, ID -- A 70 60 50 40 30 20 10 0 0 1 2 3 4V Tc= 25 75° VGS=3V C °C --25° C 4 25° 5 10 C 75° C 6 IT07962 6V VDS=10V Drain-to-Source Voltage, VDS -- V IT07961 Gate-to-Source Voltage, VGS -- V Tc= --25 °C Tc=25°C 100 ID -- VGS No.8032-2/4 2SK3830 35 RDS(on) -- VGS ID=36A 40 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 30 35 30 25 20 15 10 5 0 --50 25 20 Tc=75°C 15 I D= , 36A =4V V GS 25°C --25°C , 36A I D= =10 VGS V 10 5 0 2 3 4 5 6 7 8 9 10 IT07963 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID Case Temperature, Tc -- °C 100 7 5 3 2 IT07964 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 3 VDS=10V Forward Current, IF -- A 2 10 7 5 3 2 1.0 7 5 3 0.1 2 3 5 7 1.0 °C 25 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 7 100 IT07965 7 5 Tc=7 5°C 25°C --25°C 0.6 0.9 °C -25 =°C Tc 75 10 7 5 3 2 1.2 1.5 IT07966 SW Time -- ID Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS f=1MHz Switching Time, SW Time -- ns 5 3 2 VDD=30V VGS=10V td(off) Ciss Ciss, Coss, Crss -- pF 3 2 tf 100 7 5 3 2 1000 7 5 tr Coss Crss td(on) 3 10 0.1 2 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 10 9 5 7 100 IT07967 7 5 3 2 0 5 10 15 20 25 30 IT07968 Drain-to-Source Voltage, VDS -- V VGS -- Qg ASO IDP=288A ID=72A