2SK3832

Ordering number : ENN8015 2SK3832 2SK3832 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1. VDD=20V, L=100µH, IAV=30A *2. L≤100µH, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 100 ±20 30 120 2.5 65 150 --55 to +150 56 30 Unit V V A A W W °C °C mJ A Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15A ID=15A, VGS=10V ID=15A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 100 1 ±10 1.2 12.5 21 46 57 2150 160 110 60 80 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : K3832 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2404QA TS IM TB-00000312 No.8015-1/4 2SK3832 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=30A VDS=50V, VGS=10V, ID=30A VDS=50V, VGS=10V, ID=30A IS=30A, VGS=0 Ratings min typ 20 36 180 60 42 7.2 9.2 1.0 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2056A 15.6 14.0 3.2 4.8 2.0 Switching Time Test Circuit VIN 10V 0V VIN PW=10µs D.C.≤1% VDD=50V ID=15A RL=3.3Ω 2.6 3.5 D 1.3 1.2 15.0 20.0 VOUT G 20.0 1.6 2.0 0.6 P.G 50Ω 2SK3832 1.0 1 0.6 2 3 S 1.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB 5.45 5.45 Unclamped Inductive Circuit ≥50Ω RG L DUT 15V 0V 50Ω VDD 60 ID -- VDS Tc=25°C 60 ID -- VGS 5°C Tc= -2 75° C 5.0 50 8.0 10 V V 50 VDS=10V Drain Current, ID -- A 40 6.0 Drain Current, ID -- A V 4.0V 40 30 30 20 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT07709 0 0 1.0 2.0 3.0 4.0 6.0 IT07710 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V Tc= VGS=3.0V 10 25 °C 75 °C --25 °C 25° No.8015-2/4 C 2SK3832 120 RDS(on) -- VGS ID=15A 130 120 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 110 100 90 80 70 60 50 40 30 20 10 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 110 100 90 80 70 60 50 40 30 20 10 Tc=75°C 25°C --25°C =1 ID 5 VG A, A 4 S= V V 15 I D= 10 S= , VG 9.0 10 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID IT07711 100 7 5 3 2 Case Temperature, Tc -- °C IT07712 IF -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 VDS=10V Forward Current, IF -- A 3 2 ° 25 C 10 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 0.6 0.9 1.2 1.5 IT07714 0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 7 5 3 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V Drain Current, ID -- A 5 7 100 IT07713 10 9.0 Diode Forward Voltage, VSD -- V VDS=50V ID=30A Ciss Ciss, Coss, Crss -- pF 2 1000 7 5 3 2 100 7 5 0 5 10 15 20 25 30 IT07715 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 5 10 15 20 25 30 35 40 45 Coss Crss Drain-to-Source Voltage, VDS -- V 1000 7 Total Gate Charge, Qg -- nC 3 2 100 7 5 Tc=7 5°C 25°C --25° C C 5° -2 =Tc °C 75 10 7 5 3 2 1.0 7 5 3 2 VGS -- Qg IT07716 SW Time -- ID VDD=50V VGS=10V td(off) ASO IDP=120A ID=30A 10 10 ms 0m DC s op era tio n