2SK4085LS_12

Ordering number : ENA0553D 2SK4085LS SANYO Semiconductors DATA SHEET 2SK4085LS Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)=0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc *1 IDpack *2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Conditions Ratings 500 ±30 16 11 60 2.0 40 150 --55 to +150 141 16 Unit V V A A A W W °C °C mJ A *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=1mH, IAV=16A (Fig.1) *5 L≤1mH, Single pulse Package Dimensions unit : mm (typ) 7528-001 10.16 3.18 3.3 4.7 2.54 Product & Package Information • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 6.68 15.8 3.23 15.87 2 K4085 2.76 LOT No. 1 1.47 MAX 0.8 12.98 3 1 2 3 0.5 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS 2.54 2.54 http://semicon.sanyo.com/en/network 40412 TKIM TC-00002743/O1007 TIIM TC-00000927/40407QB TIIM TC-00000628/22107QB TIIM TC-00000556 No. A0553-1/5 2SK4085LS Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=16A, VGS=0V VDS=200V, VGS=10V, ID=16A VDS=30V, f=1MHz Conditions ID=10mA, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=10V 3 4.5 9 0.33 1200 250 55 26.5 See Fig.2 78 146 57 46.6 8.2 27.4 0.95 1.3 0.43 Ratings min 500 100 ±100 5 typ max Unit V μA nA V S Ω pF pF pF ns ns ns ns nC nC nC V Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit VIN 10V 0V VIN ID=8A RL=25Ω D VDD PW=10μs D.C.≤0.5% G VOUT VDD=200V L ≥50Ω RG 2SK4085LS 10V 0V 50Ω 2SK4085LS P.G RGS=50Ω S 45 40 35 ID -- VDS Tc=25°C 15V 45 ID -- VGS VDS=20V 40 10V Tc= --25°C 25°C 75°C 35 Drain Current, ID -- A 30 25 20 15 10 5 0 0 5 10 15 20 8V Drain Current, ID -- A 30 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 6V VGS=5V 25 18 20 Drain-to-Source Voltage, VDS -- V IT11732 Gate-to-Source Voltage, VGS -- V IT11733 No. A0553-2/5 2SK4085LS 1.2 RDS(on) -- VGS ID=8A 1.0 0.9 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 --50 --25 0 25 50 75 100 125 150 0.8 0.6 Tc=75°C 25°C --25°C =8 ID A =1 S , VG 0V 0.4 0.2 0 3 5 7 9 11 13 15 IT11734 Gate-to-Source Voltage, VGS -- V 3 | yfs | -- ID Case Temperature, Tc -- °C 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IS -- VSD IT11735 Forward Transfer Admittance, | yfs | -- S 2 VDS=10V VGS=0V 7 5 3 2 = Tc --2 5°C °C 75 Source Current, IS -- A 10 °C 25 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 3 2 0.01 0.2 0.4 0.6 --25°C 0.8 1.0 0.1 7 5 Tc=7 5°C 25°C 1.0 1.2 1.4 IT11737 Drain Current, ID -- A 1000 7 SW Time -- ID IT11736 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=200V VGS=10V f=1MHz td (off) Ciss, Coss, Crss -- pF Ô Ciss 100 7 5 3 2 10 0.1 Coss Ô tr tf Ô (on) td Crss Ô 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 10 0 5 10 15 20 25 30 35 40 45 50 Drain Current, ID -- A 10 9 VGS -- Qg IT11738 100 7 5 3 2 Drain-to-Source Voltage, VDS -- V ASO IT11739 Gate-to-Source Voltage, VGS -- V VDS=200V ID=16A Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 IT11740 IDP=60A(PW≤10μs) IDc(*1)=16A 1 10 0ms DC 0m IDpack(*2)=11A s op era tio n Operation in this area is limited by RDS(on). 1m 10 10 s μs 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0μ s 0.01 1.0 Tc=25°C Single pulse 2 3 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 2 3 5 7 100 2 3 5 71000 IT16814 5 7 10 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V No. A0553-3/5 2SK4085LS 2.5 PD -- Ta Allowable Power Dissipation, PD -- W 45 40 35 30 25 20 15 10 5 0 0 20 40 PD -- Tc Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT11730 Case Temperature, Tc -- °C IT11742 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C No. A0553-4/5 2SK4085LS Note on usage : Since the 2SK4085LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2012. Specifications and information herein are subject to change without notice. PS No. A0553-5/5