2SK4094_12

Ordering number : ENA0523A 2SK4094 SANYO Semiconductors DATA SHEET 2SK4094 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=3.8mΩ (typ.) Input capacitance Ciss=12500pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 100 400 1.75 90 150 --55 to +150 850 70 Unit V V A A W W °C °C mJ A Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse Package Dimensions unit : mm (typ) 7536-001 10.0 (1.7) 1.3 3.6 2.8 4.5 1.3 Product & Package Information • Package : TO-220-3L • JEITA, JEDEC : SC-46, TO-220AB • Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 (0.6) 15.7 8.9 MAX 13.3 9.2 K4094 LOT No. 1 3.0 1.52 13.08 1.27 0.8 0.5 3 123 1 : Gate 2 : Drain 3 : Source SANYO : TO-220-3L 2.54 2.54 2.4 http://semicon.sanyo.com/en/network 12512 TKIM TC-00002699/N0806QA SYIM TC-00000295 No. A0523-1/5 2SK4094 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=100A, VGS=0V VDS=30V, VGS=10V, ID=100A See Fig.2 VDS=20V, f=1MHz Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=50A ID=50A, VGS=10V ID=50A, VGS=4V Ratings min 60 1 ±10 1.2 45 75 3.8 4.9 12500 1200 950 80 630 860 750 220 30 55 1.0 1.2 5.0 7.0 2.6 typ max Unit V μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Fig.1 Avalanche Resistance Test Circuit L ≥50Ω 2SK4094 10V 0V 50Ω VDD Fig.2 Switching Time Test Circuit 10V 0V VIN VDD=30V VIN PW=10μs D.C.≤1% G D ID=50A RL=0.6Ω VOUT 2SK4094 P.G 50Ω S 200 ID -- VDS 4V 180 160 180 160 Drain Current, ID -- A Drain Current, ID -- A 10 140 120 100 80 60 40 20 0 0 0.2 140 120 100 80 Tc= --25 °C VGS=3V 60 40 20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 25° C 75°C Tc=75° C --25° C 3.5 V 6V 4.0 25° C 4.5 IT11431 Tc=25°C Single pulse 200 ID -- VGS VDS=10V Single pulse Drain-to-Source Voltage, VDS -- V 8V IT11430 Gate-to-Source Voltage, VGS -- V No. A0523-2/5 2SK4094 20 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=50A Single pulse 10 RDS(on) -- Tc Single pulse Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 18 16 14 12 10 8 6 4 2 0 1 2 3 4 5 6 7 9 8 7 6 5 4 3 2 1 0 --50 --25 0 25 50 75 100 125 150 A =50 V, I D =4 A =50 V GS V, I D =10 V GS 25°C Tc=75°C --25°C 8 9 10 Gate-to-Source Voltage, VGS -- V 3 | yfs | -- ID IT11558 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 Case Temperature, Tc -- °C IS -- VSD IT11559 Forward Transfer Admittance, | yfs | -- S 2 100 7 5 3 2 10 7 5 3 2 VDS=10V Single pulse Source Current, IS -- A VGS=0V Single pulse °C 25 = Tc 5°C --2 C 75° °C 25°C 1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 3 2 5 7 100 IT11434 0 0.2 Tc=7 5 0.4 0.6 --25°C 0.8 1.0 1.2 1.4 IT11435 SW Time -- ID td(off) VDD=30V VGS=10V Ciss, Coss, Crss -- pF 3 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V f=1MHz 2 Switching Time, SW Time -- ns 1000 7 5 3 2 10k 7 5 3 2 tf tr 100 7 5 0.1 2 3 5 7 1.0 td(on) 2 3 5 7 10 2 3 5 7 100 IT10473 1k Coss Crss 7 5 0 5 10 15 20 25 30 IT10474 Drain Current, ID -- A 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V 1000 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=100A Drain Current, ID -- A IDP=400A ID=100A 8 7 6 5 4 3 2 1 0 0 50 100 150 200 250 IT10475 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 1m s 1 10 DC 00m ms s op era tio n ≤10μs 1 0μ s 10 0μ s Operation in this area is limited by RDS(on). 0.1 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 100 IT10960 No. A0523-3/5 2SK4094 2.0 PD -- Ta Allowable Power Dissipation, PD -- W 100 90 80 70 60 50 40 30 20 10 0 0 20 40 PD -- Tc Allowable Power Dissipation, PD -- W 1.75 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT11548 Case Temperature, Tc -- °C IT10483 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT11439 Ambient Temperature, Ta -- °C No. A0523-4/5 2SK4094 Note on usage : Since the 2SK4094 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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