2SK4117LS

Ordering number : ENA0791 2SK4117LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4117LS Features • • • • General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature SANYO’s ideal heat dissipation condition PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition) Conditions Ratings 400 ±30 15 10.4 47 2.0 35 150 --55 to +150 296 15 Unit V V A A A W W °C °C mJ A *1 Shows chip capability *2 Package limited *3 VDD=99V, L=2mH, IAV=15A *4 L≤2mH, single pulse Marking : K4117 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60607QB TI IM TC-00000710 No. A0791-1/5 2SK4117LS Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=320V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7.5A ID=7.5A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=15A VDS=200V, VGS=10V, ID=15A VDS=200V, VGS=10V, ID=15A IS=15A, VGS=0V Ratings min 400 100 ±100 3 3.6 7.2 0.32 755 180 42 16 62 101 56 30.6 5.2 19.5 0.9 1.2 0.42 5 typ max Unit V µA nA V S Ω pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 4.5 2.8 3.5 7.2 16.0 16.1 0.9 1.2 0.75 3.6 1.2 14.0 0.7 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN ID=7.5A RL=26.7Ω VDD=200V 0.6 Avalanche Resistance Test Circuit L ≥50Ω RG D PW=10µs D.C.≤0.5% VOUT 10V 0V 50Ω 2SK4117LS VDD G 2SK4117LS P.G RGS=50Ω S No. A0791-2/5 2SK4117LS 35 ID -- VDS Tc=25°C 40 ID -- VGS VDS=20V Tc= --25°C 30 15V 35 30 25 20 15 10 5 0 30 IT12503 1.0 0 3 6 9 10V Drain Current, ID -- A 25 Drain Current, ID -- A 25°C 75°C 20 8V 15 10 5 0 0 5 10 15 20 6V VGS=5V 25 12 15 IT12504 Drain-to-Source Voltage, VDS -- V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 6.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS RDS(on) -- Tc ID=7.5A 0.9 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 --50 --25 0 25 50 75 100 125 150 Tc=75°C 25°C --25°C VG =1 S =7 ID V, 0 .5A 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 Gate-to-Source Voltage, VGS -- V 3 IT12505 5 Case Temperature, Tc -- °C IT12506 yfs -- ID IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 2 VDS=10V 3 2 10 7 5 3 2 1.0 7 5 3 2 10 7 5 3 2 °C -25 =Tc C 75° 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 3 2 0.01 0.2 0.4 Tc=7 5 0.1 7 5 0.6 --25°C 0.8 °C 25°C 1.0 Source Current, IS -- A C 25° 1.0 1.2 1.4 IT12508 Drain Current, ID -- A 1000 7 IT12507 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=200V VGS=10V Ciss, Coss, Crss -- pF Ciss td (off) 100 7 5 3 2 Coss tr tf td(on) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Crss 10 0.1 0 10 20 30 40 50 IT12510 Drain Current, ID -- A IT12509 Drain-to-Source Voltage, VDS -- V No. A0791-3/5 2SK4117LS 10 9 VGS -- Qg VDS=200V ID=15A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 10 20 30 40 IT12511 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=47A IDc(*1)=15A IDpack(*2)=10.4A PW≤10µs 1 0µ s 10 0µ s 1m 10 s 10 ms 0m DC s op era tio n Operation in this area is limited by RDS(on). Tc=25°C Single pulse 23 5 7 1.0 0.01 0.1 *1. Shows chip capability *2. SANYO’s ideal heat dissipation condition 23 5 7 10 23 5 7 100 23 57 IT12370 Total Gate Charge, Qg -- nC 2.5 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 40 35 30 25 20 15 10 5 0 PD -- Tc Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 120 IT12368 Case Temperature, Tc -- °C IT12371 EAS -- Ta Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C No. A0791-4/5 2SK4117LS Note on usage : Since the 2SK4117LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No. A0791-5/5