2SK4126_0712

Ordering number : ENA0748A 2SK4126 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4126 Features • • • General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *2 Avalanche Current *3 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*1 Conditions Ratings 650 ±30 15 48 2.5 170 150 --55 to +150 132 15 Unit V V A A W W °C °C mJ A *1 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=99V, L=1mH, IAV=15A *3 L≤1mH, single pulse Marking : K4126 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0507 TI IM TC-00001054 / 61307QB TI IM TC-00000730 No. A0748-1/5 2SK4126 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=520V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7.5A ID=6A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=15A VDS=200V, VGS=10V, ID=15A VDS=200V, VGS=10V, ID=15A IS=15A, VGS=0V Ratings min 650 100 ±100 3 4.1 8.2 0.55 1200 208 44 27 80 45 50 45.4 8.3 25.8 0.95 1.3 0.72 5 typ max Unit V µA nA V S Ω pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7503-004 15.6 14.0 4.8 3.2 2.0 2.6 3.5 2.0 1.6 1.3 20.0 15.0 20.0 1.2 1.0 0.6 1 23 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB 5.45 5.45 Switching Time Test Circuit VIN 10V 0V VIN ID=7.5A RL=26.7Ω VDD=200V 1.4 Avalanche Resistance Test Circuit L ≥50Ω RG D PW=10µs D.C.≤0.5% VOUT 2SK4126 10V 0V G 50Ω VDD 2SK4126 P.G RGS=50Ω S No. A0748-2/5 2SK4126 35 ID -- VDS Tc=25°C 10V 35 ID -- VGS VDS=20V 30 30 Tc= --25°C 25°C 75°C Drain Current, ID -- A 25 8V Drain Current, ID -- A 15V 25 20 20 15 15 10 10 6V 5 5 VGS=5V 0 0 5 10 15 20 25 30 IT11773 1.6 0 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V 2.0 1.8 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT11774 RDS(on) -- Tc ID=6A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.6 1.4 1.2 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --50 Tc=75°C 0.8 0.6 0.4 0.2 0 3 5 7 9 11 13 15 IT11775 =6 ID A 0V =1 GS ,V 25°C --25°C --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 3 Case Temperature, Tc -- °C 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IT11776 ⏐yfs⏐ -- ID IS -- VSD VGS=0V Forward Transfer Admittance, ⏐yfs⏐ -- S 2 VDS=10V 7 5 3 2 °C 25 = Tc --2 5°C 75 °C Source Current, IS -- A 10 7 5 3 0.1 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 0.2 0.4 0.6 --25°C 0.8 1.0 0.1 7 5 Tc=7 5°C 25°C 1.0 1.2 1.4 IT11778 Drain Current, ID -- A 1000 7 IT11777 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=200V VGS=10V td (off) Ciss, Coss, Crss -- pF Ciss 100 7 5 3 2 Coss tr tf td(on) Crss 10 0.1 10 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 10 20 30 40 50 IT11780 Drain Current, ID -- A IT11779 Drain-to-Source Voltage, VDS -- V No. A0748-3/5 2SK4126 10 9 VGS -- Qg VDS=200V ID=15A 100 7 5 3 2 ASO IDP=48A ID=15A PW≤10µs µs 10 Gate-to-Source Voltage, VGS -- V 0µ 10 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 IT12530 s 1m s n ms io 10 0m erat 10 op DC s Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 Operation in this area is limited by RDS(on). Tc=25°C Single pulse 23 5 7 1.0 23 5 7 10 23 5 7 100 23 Total Gate Charge, Qg -- nC 3.0 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 200 180 170 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 5 71000 IT12250 PD -- Tc Allowable Power Dissipation, PD -- W 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 140 160 Ambient Temperature, Ta -- °C 120 IT12251 Case Temperature, Tc -- °C IT12252 EAS -- Ta Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C No. A0748-4/5 2SK4126 Note on usage : Since the 2SK4126 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2007. Specifications and information herein are subject to change without notice. PS No. A0748-5/5