2SK4179GS

Ordering number : ENA1498 2SK4179GS SANYO Semiconductors DATA SHEET 2SK4179GS Features • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 75 ±20 80 320 1.75 70 150 --55 to +150 100 48 Unit V V A A W W °C °C mJ A Note : *1 VDD=30V, L=50μH, IAV=48A *2 L≤50μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=75V, VGS=0V VGS=±16V, VDS=0V Ratings min 75 1 ±10 typ max Unit V μA μA Marking : K4179 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 61009QA MS IM TC-00001991 No. A1498-1/5 2SK4179GS Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=1mA VDS=10V, ID=40A ID=40A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=80A VDS=30V, VGS=10V, ID=80A VDS=30V, VGS=10V, ID=80A IS=80A, VGS=0V Ratings min 2 35 10.5 5400 480 350 62 335 220 160 100 30 28 1.07 1.5 13.7 typ max 4 Unit V S mΩ pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7530-001 10.2 2.7 3.6 4.5 1.3 6.3 14.0 15.1 14.0 (1.6) 1.2 0.8 0.4 1 2.55 2 3 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220(LS) 2.55 2.55 Switching Time Test Circuit 10V 0V VIN VDD=30V 2.7 Avalanche Resistance Test Circuit L VIN ID=40A RL=0.75Ω D VOUT 10V 0V 50Ω ≥50Ω 2SK4179GS VDD PW=10μs D.C.≤1% G 2SK4179GS P.G 50Ω S No. A1498-2/5 2SK4179GS 160 140 120 100 80 60 40 20 0 ID -- VDS Tc=25°C 10 V 160 ID -- VGS 5°C Tc= --2 0 1 2 3 4 5 7V 140 120 100 80 60 40 20 0 Drain Current, ID -- A 6V 0 0.5 1.0 1.5 2.0 2.5 3.0 IT13864 25° --25°C C VGS=5V Drain Current, ID -- A Tc =7 5 °C 6 75° C 7 25° C 8 IT13865 125 150 IT13867 1.4 1.6 IT13869 8V VDS=10V Drain-to-Source Voltage, VDS -- V 30 28 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 25 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=40A Single pulse 20 VGS=10V ID=40A Single pulse 15 Tc=75°C 25°C --25°C 10 5 4 5 6 7 8 9 10 IT13866 0 --50 --25 0 25 50 75 100 Gate-to-Source Voltage, VGS -- V 100 | yfs | -- ID Case Temperature, Tc -- °C 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 IS -- VSD Forward Transfer Admittance, | yfs | -- S 7 5 3 2 10 7 5 3 2 1.0 VDS=10V VGS=0V Single pulse °C 25 = Tc C 5° --2 °C 75 Source Current, IS -- A 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 7 5 5 7 100 IT13868 0 0.2 Tc=7 5°C 25°C --25°C 0.4 0.6 0.8 1.0 1.2 SW Time -- ID 10000 7 5 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V VDD=30V VGS=10V Ciss, Coss, Crss -- pF td(off) f=1MHz Switching Time, SW Time -- ns 3 2 3 2 tf 100 7 5 1000 7 5 3 2 100 tr Coss td(on) Crss 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT13870 0 5 10 15 20 25 30 IT13871 Drain-to-Source Voltage, VDS -- V No. A1498-3/5 2SK4179GS 10 9 VGS -- Qg VDS=30V ID=80A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 IT13872 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=320A ID=80A 10 s 10 ms 0m s PW≤10μs 1m 10 0μ s 10 μs Operation in this area is limited by RDS(on). DC op er ati on 0.1 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.0 PD -- Ta Drain-to-Source Voltage, VDS -- V 80 PD -- Tc 5 7 100 IT13873 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 0 20 40 60 80 100 120 140 160 1.75 1.5 70 60 50 40 30 20 10 0 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Tc -- °C 120 EAS -- Ta IT13874 Case Temperature, Tc -- °C IT13875 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT12429 Ambient Temperature, Ta -- °C No. A1498-4/5 2SK4179GS Note on usage : Since the 2SK4179GS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2009. Specifications and information herein are subject to change without notice. PS No. A1498-5/5