2SK4196LS

Ordering number : ENA1233 2SK4196LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4196LS Features • • • • General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Conditions Ratings 500 ±30 5.5 5.0 21 2.0 30 150 --55 to +150 93.8 5.5 Unit V V A A A W W °C °C mJ A *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=5.5A *5 L≤5mH, single pulse Marking : K4196 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2208QB MS IM TC-00001651 No. A1233-1/5 2SK4196LS Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2.8A ID=2.8A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=5.5A VDS=200V, VGS=10V, ID=5.5A VDS=200V, VGS=10V, ID=5.5A IS=5.5A, VGS=0V Ratings min 500 100 ±100 3 1.3 2.5 1.2 360 77 17 13 32 39 18 14.6 3.2 8.8 0.9 1.2 1.56 5 typ max Unit V μA nA V S Ω pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 4.5 2.8 3.5 7.2 16.0 16.1 0.9 1.2 0.75 3.6 1.2 14.0 0.7 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 2.55 2.55 Switching Time Test Circuit PW=10μs D.C.≤0.5% VDD=200V 0.6 Avalanche Resistance Test Circuit L VGS=10V ID=2.8A RL=71Ω ≥50Ω RG D VOUT 2SK4196LS 10V 0V G 50Ω VDD 2SK4196LS P.G RGS=50Ω S No. A1233-2/5 2SK4196LS 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 IT14089 4.0 ID -- VDS Tc=25°C 16 14 ID -- VGS VDS=20V Tc= --25°C 25°C Drain Current, ID -- A 10V Drain Current, ID -- A 15V 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 75°C 8V VGS=5V 6V Drain-to-Source Voltage, VDS -- V 5.0 4.5 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT14090 RDS(on) -- Tc ID=2.8A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 5 6 7 8 9 10 11 12 13 14 15 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --50 Tc=75°C 25°C --25°C =2 , ID 0V =1 V GS .8A --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 7 IT14091 3 2 10 7 5 Case Temperature, Tc -- °C IT14092 ⏐yfs⏐ -- ID °C 25 IS -- VSD VGS=0V Forward Transfer Admittance, ⏐yfs⏐ -- S 5 3 2 VDS=10V Source Current, IS -- A Tc 1.0 7 5 3 2 25 = -- °C 3 2 1.0 7 5 75 °C Tc=7 5°C 0.4 0.6 3 2 0.1 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 5 3 10 IT14093 7 0.01 0.2 25°C --25° C 0.8 1.0 1.2 1.4 IT14094 SW Time -- ID 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=200V VGS=10V 1000 7 5 3 2 100 7 5 3 2 Switching Time, SW Time -- ns 2 100 7 5 3 2 td (off) tr Ciss, Coss, Crss -- pF Ciss Coss tf Crss 10 7 0.1 2 3 5 7 td(on) 1.0 2 3 5 7 10 IT14095 10 7 0 10 20 30 40 50 IT14096 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A1233-3/5 2SK4196LS 10 9 VGS -- Qg VDS=200V ID=5.5A Drain Current, ID -- A 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=21A IDc(*1)=5.5A IDpack(*2)=5A PW