2SK4197LS

Ordering number : ENA1223 2SK4197LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4197LS Features • • • • General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Conditions Ratings 600 ±30 3.5 3.3 13 2.0 28 150 --55 to +150 36.6 3.5 Unit V V A A A W W °C °C mJ A *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=3.5A *5 L≤5mH, single pulse Marking : K4197 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62508QB TI IM TC-00001485 No. A1223-1/5 2SK4197LS Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.8A ID=1.8A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=3.5A VDS=200V, VGS=10V, ID=3.5A VDS=200V, VGS=10V, ID=3.5A IS=3.5A, VGS=0V Ratings min 600 100 ±100 3 0.8 1.6 2.5 260 50 9.7 12 20 28 12 11 2.6 5.8 0.9 1.2 3.25 5 typ max Unit V μA nA V S Ω pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 4.5 2.8 3.5 7.2 16.0 16.1 0.9 1.2 0.75 3.6 1.2 14.0 0.7 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 2.55 2.55 Switching Time Test Circuit PW=10μs D.C.≤0.5% 0.6 Avalanche Resistance Test Circuit VDD=200V ≥50Ω RG L VGS=10V ID=1.8A RL=111Ω D VOUT 10V 0V 50Ω 2SK4197LS VDD G 2SK4197LS P.G RGS=50Ω S No. A1223-2/5 2SK4197LS 8 7 ID -- VDS Tc=25°C 10V 8 7 6 5 4 3 2 1 0 ID -- VGS VDS=20V Tc= --25°C 25°C 75°C Drain Current, ID -- A 5 4 3 2 1 0 0 5 10 15 20 25 30 IT13709 8V VGS=5V 6V Drain Current, ID -- A 6 15V 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V 8 7 6 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 8 IT13710 RDS(on) -- Tc ID=1.8A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 6 5 4 3 2 1 0 --50 Tc=75°C 25°C --25°C VG =1 S =1 , ID 0V .8A 14 15 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 5 IT13711 3 2 10 7 5 Case Temperature, Tc -- °C IT13712 ⏐yfs⏐ -- ID IS -- VSD VGS=0V Forward Transfer Admittance, ⏐yfs⏐ -- S VDS=10V 3 Source Current, IS -- A 2 °C 25 C 25° = -- 3 2 1.0 7 5 1.0 7 5 3 2 Tc C 75° Tc=7 5°C 25°C 0.4 0.6 3 2 0.1 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 0.01 0.2 --25° C 0.8 1.0 1.2 1.4 IT13714 Drain Current, ID -- A 5 3 IT13713 1000 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=200V VGS=10V 7 5 3 Switching Time, SW Time -- ns 2 Ciss Ciss, Coss, Crss -- pF 2 100 7 5 3 2 10 100 7 5 3 2 tf Coss td (off) tr Crss 10 7 0.1 2 3 5 7 td(on) 1.0 2 3 5 7 7 5 0 10 20 30 40 50 IT13737 IT13715 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A1223-3/5 2SK4197LS 10 9 VGS -- Qg VDS=200V ID=3.5A Drain Current, ID -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=13A IDc(*1)=3.5A IDpack(*2)=3.3A PW