30C02CH

Ordering number : ENN7363 30C02CH NPN Epitaxial Planar Silicon Transistor 30C02CH Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2150A [30C02CH] Low-frequency Amplifier, high-speed switching, small motor drive. Features 0.4 • 0.6 3 • 1 1.9 2 0.6 1.6 2.8 • 0.05 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 40 30 5 700 1.4 700 150 --55 to +150 Unit V V V mA A mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=30V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=10V, IC=50mA 300 540 Conditions Ratings min typ max 100 100 800 MHz Unit nA nA Marking : CL 0.7 0.9 0.2 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo http://semicon.sanyo.com/en/network TOKYO, 110-8534 JAPAN Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO OFFICE Tokyo Bldg., 1-10, 1 1 Chome, Ueno,Taito-ku, TOKYO, 110-8534 JAPAN O2203 TS IM TA-100140 No.7363-1/4 0.2 • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 2.9 0.15 30C02CH Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=200mA, IB=10mA IC=200mA, IB=10mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 40 30 5 35 255 40 Ratings min typ 3.3 85 0.9 190 1.2 max Unit pF mV V V V V ns ns ns Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 220µF VBE= --5V + 470µF VCC=12V RB RL 20IB1= --20IB2=IC=300mA 700 IC -- VCE A 15m A 20mA 800 IC -- VBE VCE=2V 10m A 7mA 5mA Collector Current, IC -- mA 700 600 500 400 300 200 100 600 Collector Current, IC -- mA 30m 500 3mA 2mA 1mA 400 A 50m 300 200 400µA 200µA 100 0 0 IB=0 100 200 300 400 500 600 700 800 900 1000 0 0 0.2 0.4 0.6 0.8 1.0 IT05083 Collector-to-Emitter Voltage, VCE -- mV 1000 IT05082 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 Base-to-Emitter Voltage, VBE -- V hFE -- IC Ta=75°C VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV VCE(sat) -- IC IC / IB=20 7 25°C DC Current Gain, hFE 5 --25°C °C 75 2 Ta= 5°C 3 5 --2 °C 2 100 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05084 5 7 10 2 3 5 7 100 Ta=7 5°C 25°C 2 --25°C 3 5 7 1000 IT05085 Collector Current, IC -- mA Collector Current, IC -- mA No.7363-2/4 30C02CH 1000 7 VCE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 10 7 5 3 2 VBE(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 100 7 5 3 2 °C 75 1.0 7 5 3 2 Ta=--25°C = Ta °C 25 5°C --2 25°C 75°C 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05086 0.1 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 10 Cob -- VCB Collector Current, IC -- mA 1000 5 7 1000 IT05087 fT -- IC f=1MHz Gain-Bandwidth Product, fT -- MHz VCE=10V Output Capacitance, Cob -- pF 7 7 5 5 3 3 2 2 1.0 1.0 2 3 5 7 10 2 3 5 IT05088 100 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Base Voltage, VCB -- V 10 7 5 Ron -- IB IN Collector Current, IC -- mA 800 5 7 1000 IT05089 PC -- Ta f=1MHz 1kΩ 1kΩ IB OUT Collector Dissipation, PC -- mW 700 600 500 400 300 200 100 0 ON Resistance, Ron -- Ω M 3 2 ou nt ed on ac er 1.0 7 5 3 2 am ic bo ar d( 60 0m m2 ! 0. 8m m ) 160 0.1 0.1 2 3 5 7 1.0 2 3 5 Base Current, IB -- mA 10 IT06793 7 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IT05091 No.7363-3/4 30C02CH Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.7363-4/4