3LN01M_06

Ordering number : EN6138A 3LN01M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN01M Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 30 ± 10 0.15 0.6 0.15 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=± 8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 ± 10 0.4 0.15 0.22 2.9 3.7 6.4 7.0 5.9 2.3 3.7 5.2 12.8 1.3 typ max Unit V µA µA V S Ω Ω Ω pF pF pF Marking : YA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 32406PE MS IM TB-00002152 / 31000 TS (KOTO) TA-1985 No.6138-1/4 3LN01M Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0V Ratings min typ 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7023-010 Switching Time Test Circuit 0.425 4V 0V VIN VIN VDD=15V ID=80mA RL=187.5Ω VOUT 0.2 0.3 0.15 3 PW=10µs D.C.≤1% D G 1.25 2.1 0 to 0.1 3LN01M 0.425 1 2 0.65 0.65 2.0 P.G 0.3 0.9 0.6 50Ω S 1 : Gate 2 : Source 3 : Drain SANYO : MCP 0.16 0.14 0.12 0.10 0.08 ID -- VDS 2.5 0.30 ID -- VGS --25 °C Ta= VDS=10V V 3.5V 4.0V V 6.0 V 3.0 0.25 Drain Current, ID -- A Drain Current, ID -- A 0.15 VGS=1.5V 0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 1.0 IT00029 0.10 75 °C °C Ta = 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00030 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V 25 --2 5 0.05 °C 75 No.6138-2/4 °C 0.20 25 °C 2.0V 3LN01M 10 RDS(on) -- VGS Ta=25°C 10 RDS(on) -- ID VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 7 5 Ta=75°C 3 80mA ID=40mA 25°C --25°C 2 1.0 0.01 2 3 5 7 0.1 2 3 5 Gate-to-Source Voltage, VGS -- V 10 IT00031 100 RDS(on) -- ID Drain Current, ID -- A 7 1.0 IT00032 RDS(on) -- ID VGS=2.5V 7 VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 3 2 5 Ta=75°C 25°C --25°C 3 10 7 5 3 2 Ta=75°C --25°C 25°C 2 1.0 0.01 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 7 1.0 IT00033 7 1.0 0.001 2 3 5 7 0.01 2 3 5 RDS(on) -- Ta Forward Transfer Admittance, yfs -- S Drain Current, ID -- A 1.0 7 5 3 2 7 0.1 IT00034 yfs -- ID VDS=10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 6 5 4 40 I D= mA , =2. V GS 5V -Ta= 25°C 75°C 25°C 3 80 I D= 2 m 4.0 S= A, VG V 0.1 7 5 3 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 1.0 7 5 0.01 0.01 2 3 5 7 0.1 2 3 5 IT00035 1000 IS -- VSD VGS=0V Drain Current, ID -- A 7 1.0 IT00036 SW Time -- ID VDD=15V VGS=4V 7 Source Current, IS -- A 3 2 Switching Time, SW Time -- ns 5 3 2 td(off) tf tr Ta = 75 °C 0.1 7 5 3 2 25 °C --2 5°C 100 7 5 3 2 td(on) 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00037 10 0.01 2 3 5 7 0.1 2 IT00038 Diode Forward Voltage, VSD -- V Drain Current, ID -- A No.6138-3/4 3LN01M 100 7 5 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V 10 9 8 7 6 5 4 3 2 1 VGS -- Qg VDS=10V ID=150mA Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 Ciss Coss Crss 1.0 0 2 4 6 8 10 12 14 16 18 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 0.20 IT00039 Total Gate Charge, Qg -- nC IT00040 PD -- Ta Allowable Power Dissipation, PD -- W 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT00041 Note on usage : Since the 3LN01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No.6138-4/4