3LN04MH

Ordering number : ENA0550 3LN04MH SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04MH Features • General-Purpose Switching Device Applications 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 30 ±10 0.35 1.4 0.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=200mA ID=200mA, VGS=4V ID=100mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 ±10 0.4 360 600 0.75 0.9 1.8 28 6.0 3.1 17.5 34.2 104 55.5 1.0 1.3 3.6 1.3 typ max Unit V µA µA V mS Ω Ω Ω pF pF pF ns ns ns ns Marking : FD Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806PE SY IM TC-00000232 No. A0550-1/4 3LN04MH Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=4V, ID=350mA VDS=10V, VGS=4V, ID=350mA VDS=10V, VGS=4V, ID=350mA IS=350mA, VGS=0V Ratings min typ 0.87 0.39 0.14 0.86 1.2 max Unit nC nC nC V Package Dimensions unit : mm (typ) 7019A-003 Switching Time Test Circuit VIN 2.0 0.25 0.15 4V 0V VIN 0 to 0.02 PW=10µs D.C.≤1% VDD=15V 3 2.1 1.6 D Rg ID=200mA RL=75Ω VOUT 1 0.25 0.65 2 0.3 P.G G 0.85 50Ω 3LN04MH S 0.07 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Rg=1.2kΩ 350 ID -- VDS 5.0V 4.0 V V 2.0 200 180 160 ID -- VGS VDS=10V 300 2.5 V Drain Current, ID -- mA 250 Drain Current, ID -- mA 140 120 100 80 60 40 200 8.0V 6.0V 150 100 50 20 0 0 0.2 0.4 0.6 0.8 1.0 IT11709 0 0 0.5 1.0 --25°C 1.5 25° C VGS=1.5V Ta=75 °C 2.0 2.5 IT11710 Drain-to-Source Voltage, VDS -- V 4.0 3.5 3.0 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 3.0 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.5 ID=200mA 2.5 2.0 10mA 2.0 1.5 1.0 0.5 0 0 1 2 100mA mA I D=10 =1.5V , V GS 1.5 1.0 I D= A, 100m =2.5V VGS 0.5 0m I D=20 =4.0V A, V GS 3 4 5 6 7 8 IT11711 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT11712 No. A0550-2/4 3LN04MH 3 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- mS 2 1000 7 5 3 2 100 7 5 3 2 10 1.0 1000 7 5 3 2 100 7 5 3 2 IS -- VSD VGS=0V Ta C 5° --2 = 75 °C Source Current, IS -- mA °C 10 7 5 3 2 1.0 Ta=7 5 0 0.2 0.4 0.6 °C 25 2 3 5 7 10 2 3 5 7 100 2 3 Drain Current, ID -- mA 3 2 5 7 1000 IT11713 100 25°C 0.8 --25° C 1.0 1.2 1.4 IT11714 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDS=15V VGS=4V td (off) Ciss, Coss, Crss -- pF 7 5 3 2 Switching Time, SW Time -- ns Ciss 100 7 5 tf tr 10 7 5 3 2 3 2 Coss td(on) Crss 10 7 10 1.0 2 3 5 7 100 2 3 5 7 1000 IT11715 3 2 1.0 0 5 10 15 20 25 30 IT11716 Drain Current, ID -- mA 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=350mA Drain Current, ID -- A IDP=1.4A 7 5 3 2 0.1 7 5 3 2 ID=0.35A DC op ≤10µs 10 0 1m µs 10 s m s 10 0m s er ati on (T a= Operation in this area is limited by RDS(on). 25 °C ) 0.9 1.0 0.01 0.1 Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Total Gate Charge, Qg -- nC 0.7 IT11717 PD -- Ta Drain-to-Source Voltage, VDS -- V IT11719 Allowable Power Dissipation, PD -- W 0.6 M 0.5 ou nt ed on 0.4 ac er am ic 0.3 bo ar d (9 0.2 00 m m2 ! 0. 0.1 0 0 20 40 60 80 100 120 8m m ) 160 140 Ambient Temperature, Ta -- °C IT11708 No. A0550-3/4 3LN04MH Note on usage : Since the 3LN04MH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0550-4/4