3LP04MH

Ordering number : ENA0551 3LP04MH P-Channel Silicon MOSFET 3LP04MH Features • General-Purpose Switching Device Applications 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings -30 ±10 --200 --800 0.6 150 --55 to +150 Unit V V mA mA W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=-1mA, VGS=0V VDS=--30V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--100µA VDS=--10V, ID=--100mA ID=-100mA, VGS=--4V ID=-50mA, VGS=-2.5V ID=-10mA, VGS=-1.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --30 --1 ±10 --0.4 190 320 1.8 2.4 4.5 35 7.2 2.1 75 170 550 350 2.4 3.4 9.0 --1.4 typ max Unit V µA µA V mS Ω Ω Ω pF pF pF ns ns ns ns Marking : QD Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806PE SY IM TC-00000230 No. A0551-1/4 3LP04MH Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--10V, VGS=-4V, ID=--200mA VDS=--10V, VGS=-4V, ID=--200mA VDS=--10V, VGS=-4V, ID=--200mA IS=--200mA, VGS=0V Ratings min typ 0.58 0.17 0.12 --0.89 --1.2 max Unit nC nC nC V Package Dimensions unit : mm (typ) 7019A-003 2.0 0.25 0.15 Switching Time Test Circuit VIN 0V --4V VIN ID= --100mA RL=150Ω VOUT VDD= --15V 3 2.1 1.6 0 to 0.02 PW=10µs D.C.≤1% D 1 0.25 0.65 2 0.3 P.G G Rg 0.85 50Ω 3LP04MH S 0.07 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Rg=5kΩ --200 ID -- VDS V --5.0 V --4.0 V --2 .5 --300 ID -- VGS 5°C VDS= --10V 75°C --160 --250 Drain Current, ID -- mA Drain Current, ID -- mA Ta= -2 0 --0.5 --1.0 --180 .0 --2 V V --140 --120 --100 --200 --6.0 --150 --8.0 V --80 --60 --40 --20 0 0 VGS= --1.5 V --100 --50 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.5 --2.0 --2.5 --3.0 IT11699 Drain-to-Source Voltage, VDS -- V 10 9 IT11698 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 7 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 6 8 7 6 Ta= 75° C --25 °C 25 °C ID= --100mA --50mA --10mA 5 10m I D= -- = --1.5 A, V GS V 4 5 4 3 2 1 0 0 --1 --2 --3 --4 --5 --6 --7 --8 3 = , V GS 50mA I D= -- --2.5V 2 1 0 --60 00 I D= --1 = --4.0V mA, V GS --40 --20 0 20 40 60 80 25° C 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT11700 Ambient Temperature, Ta -- °C IT11701 No. A0551-2/4 3LP04MH 1000 yfs -- ID VDS= --10V Forward Transfer Admittance, yfs -- mS 7 5 3 2 --1000 7 5 3 2 --100 7 5 3 2 IS -- VSD VGS=0V 100 7 5 3 2 °C -25 =°C Ta 75 C 5° Source Current, IS -- mA --10 7 5 3 2 10 --1.0 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Drain Current, ID -- mA 2 5 7--1000 IT11702 100 7 5 0 --0.2 --0.4 --0.6 25°C --0.8 --25 °C 2 Ta= 75°C --1.0 --1.2 --1.4 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT11703 VDS= --15V VGS= --4V Switching Time, SW Time -- ns 1000 Ciss Ciss, Coss, Crss -- pF 7 5 td (off) 3 2 tf 3 2 10 7 5 3 Coss tr 100 7 5 --10 td(on) 2 3 5 7 2 3 5 7 2 Crss 1.0 --100 0 --5 --10 --15 --20 --25 --30 IT11705 Drain Current, ID -- mA --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 IT11704 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --200mA --1.0 7 5 3 2 --0.1 7 5 3 2 IDP= --800mA 10 Drain Current, ID -- A ≤10µs 1m s ID= --200mA 10 DC op er m s 0m s ati Operation in this area is limited by RDS(on). on (T a= 25 °C ) 0.7 IT11706 --0.01 --0.1 Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg -- nC 0.7 PD -- Ta Drain-to-Source Voltage, VDS -- V IT11707 Allowable Power Dissipation, PD -- W 0.6 M 0.5 ou nt ed on 0.4 ac er am ic 0.3 bo ar d (9 00 m 0.2 m2 ! 0. 8m 0.1 0 0 20 40 60 80 100 120 m ) 160 140 Ambient Temperature, Ta -- °C IT11708 No. A0551-3/4 3LP04MH Note on usage : Since the 3LP04MH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0551-4/4