Ordering number : EN7487A
50A02CH
SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Transistor
50A02CH
Applications
•
Low-Frequency General-Purpose Amplifier Applications
Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit
Features
• • •
High collector current capability Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA] Low ON-resistance (Ron)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2✕0.8mm) Conditions Ratings --50 --50 --5 --500 --1.0 700 150 --55 to +150 Unit V V V mA A mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=-40V, IE=0A VEB=--4V, IC=0A VCE=-2V, IC=-10mA 200 Ratings min typ max --100 --100 500 Unit nA nA
Marking : AX
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment.
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72110EA TK IM TC-00002407 / O3103 TS IM TA-100637 No.7487-1/4
50A02CH
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=-10V, IC=--50mA VCB=-10V, f=1MHz IC=-100mA, IB=--10mA IC=-100mA, IB=--10mA IC=- μA, IE=0A -10 IC=-1mA, RBE=∞ IE=--10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --50 --50 --5 30 170 30 Ratings min typ 690 3.8 --60 --0.9 --120 --1.2 max Unit MHz pF mV V V V V ns ns ns
Package Dimensions
unit : mm (typ) 7015A-003
0.6
Switching Time Test Circuit
PW=20μs D.C.≤1% IB1 OUTPUT IB2 VR 50Ω RB
2.9 3
0.15
INPUT RL + 470μF VCC= --25V
0.2
2.8
1.6
0.05
+ 220μF
0.6
1 0.95
2 0.4
VBE=5V
1 : Base 2 : Emitter 3 : Collector SANYO : CPH3
0.9
0.2
IC=20IB1= --20IB2= --200mA
--500
IC -- VCE
--40 m
A A mA 0m -25m --20 --3 -
--600
IC -- VBE
VCE= --2V
--450
--1
5mA
--10m A
--500
Collector Current, IC -- mA
--350 --300 --250 --200 --150 --100 --50 0 0
--5mA
--2mA
Collector Current, IC -- mA
--50m
A
--400
A
--400
--300
--500μA
--200μA
--200
--100
IB=0μA
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT05119
Collector-to-Emitter Voltage, VCE -- mV
1000 7 5
IT05118 3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
IC / IB=10
VCE= --2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
2
DC Current Gain, hFE
3 2
Ta=75°C 25°C --25°C
--100 7 5
= Ta
3 2
100 7 5
C 25°
--2
3 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5 7--1000 IT05120
--10 --1.0
2
3
5
7 --10
2
3
Ta=75 °C 25°C --25°C
°C 75
--1mA
C 5°
5
7 --100
2
3
5
7
Collector Current, IC -- mA
IT05410
No.7487-2/4
50A02CH
--1000
VCE(sat) -- IC
IC / IB=20
3 2
VCE(sat) -- IC
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
7 5 3 2
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
--1000 7 5 3 2 --100 7 5 3 2 --10 --1.0
--100 7 5 3 2
Ta=
C 75°
5 --2
°C
25°C
75°C Ta= °C --25
25°C
--10 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
2
5 7--1000 IT05123
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
10
5 7--1000 IT05124
VBE(sat) -- IC
IC / IB=20
Cob -- VCB
f=1MHz
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
--1.0
Output Capacitance, Cob -- pF
7
5
Ta= --25°C
7
75°C
25°C
5
3
2
3
2 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
1000
5 7--1000 IT05125
1.0 --1.0
2
3
5
7
--10
2
3
5
f T -- IC
Collector-to-Base Voltage, VCB -- V
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
7 --100 IT05122
Ron -- IB
IN
VCE= --10V
f=1MHz
1kΩ 1kΩ IB
Gain-Bandwidth Product, f T -- MHz
OUT
7
5
3
2
ON Resistance, Ron -- Ω
100 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120
5 7--1000 IT05121
0.1 --0.1
2
3
5
7
--1.0
2
3
5
PC -- Ta
Base Current, IB -- mA
7 --10 IT06093
Collector Dissipation, PC -- mW
M
ou
nt
ed
on
ac
er
am
ic
bo
ar
d
(6
00
m
m2 ✕ 0. 8m m )
140
160
Ambient Temperature, Ta -- °C
IT05047
No.7487-3/4
50A02CH
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This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice.
PS No.7487-4/4