50A02CH_10

Ordering number : EN7487A 50A02CH SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 50A02CH Applications • Low-Frequency General-Purpose Amplifier Applications Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit Features • • • High collector current capability Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA] Low ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2✕0.8mm) Conditions Ratings --50 --50 --5 --500 --1.0 700 150 --55 to +150 Unit V V V mA A mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=-40V, IE=0A VEB=--4V, IC=0A VCE=-2V, IC=-10mA 200 Ratings min typ max --100 --100 500 Unit nA nA Marking : AX Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network 72110EA TK IM TC-00002407 / O3103 TS IM TA-100637 No.7487-1/4 50A02CH Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=-10V, IC=--50mA VCB=-10V, f=1MHz IC=-100mA, IB=--10mA IC=-100mA, IB=--10mA IC=- μA, IE=0A -10 IC=-1mA, RBE=∞ IE=--10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --50 --50 --5 30 170 30 Ratings min typ 690 3.8 --60 --0.9 --120 --1.2 max Unit MHz pF mV V V V V ns ns ns Package Dimensions unit : mm (typ) 7015A-003 0.6 Switching Time Test Circuit PW=20μs D.C.≤1% IB1 OUTPUT IB2 VR 50Ω RB 2.9 3 0.15 INPUT RL + 470μF VCC= --25V 0.2 2.8 1.6 0.05 + 220μF 0.6 1 0.95 2 0.4 VBE=5V 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 0.9 0.2 IC=20IB1= --20IB2= --200mA --500 IC -- VCE --40 m A A mA 0m -25m --20 --3 - --600 IC -- VBE VCE= --2V --450 --1 5mA --10m A --500 Collector Current, IC -- mA --350 --300 --250 --200 --150 --100 --50 0 0 --5mA --2mA Collector Current, IC -- mA --50m A --400 A --400 --300 --500μA --200μA --200 --100 IB=0μA --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT05119 Collector-to-Emitter Voltage, VCE -- mV 1000 7 5 IT05118 3 hFE -- IC Base-to-Emitter Voltage, VBE -- V VCE(sat) -- IC IC / IB=10 VCE= --2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 DC Current Gain, hFE 3 2 Ta=75°C 25°C --25°C --100 7 5 = Ta 3 2 100 7 5 C 25° --2 3 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7--1000 IT05120 --10 --1.0 2 3 5 7 --10 2 3 Ta=75 °C 25°C --25°C °C 75 --1mA C 5° 5 7 --100 2 3 5 7 Collector Current, IC -- mA IT05410 No.7487-2/4 50A02CH --1000 VCE(sat) -- IC IC / IB=20 3 2 VCE(sat) -- IC IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 7 5 3 2 --100 7 5 3 2 --10 --1.0 --100 7 5 3 2 Ta= C 75° 5 --2 °C 25°C 75°C Ta= °C --25 25°C --10 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 2 5 7--1000 IT05123 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 10 5 7--1000 IT05124 VBE(sat) -- IC IC / IB=20 Cob -- VCB f=1MHz Base-to-Emitter Saturation Voltage, VBE(sat) -- V --1.0 Output Capacitance, Cob -- pF 7 5 Ta= --25°C 7 75°C 25°C 5 3 2 3 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 1000 5 7--1000 IT05125 1.0 --1.0 2 3 5 7 --10 2 3 5 f T -- IC Collector-to-Base Voltage, VCB -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 7 --100 IT05122 Ron -- IB IN VCE= --10V f=1MHz 1kΩ 1kΩ IB Gain-Bandwidth Product, f T -- MHz OUT 7 5 3 2 ON Resistance, Ron -- Ω 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 5 7--1000 IT05121 0.1 --0.1 2 3 5 7 --1.0 2 3 5 PC -- Ta Base Current, IB -- mA 7 --10 IT06093 Collector Dissipation, PC -- mW M ou nt ed on ac er am ic bo ar d (6 00 m m2 ✕ 0. 8m m ) 140 160 Ambient Temperature, Ta -- °C IT05047 No.7487-3/4 50A02CH SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No.7487-4/4