55GN01NA

Ordering number : ENA1116 55GN01NA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01NA Features • • UHF Wide-band Low-noise Amplifier Applications High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =7dB typ (f=1GHz). =13dB typ (f=400MHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 3 70 400 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT Cob Cre VCB=10V, IE=0A VEB=2V, IC=0A VCE=5V, IC=10mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz 100 3.5 5.5 1.2 0.8 1.4 Conditions Ratings min typ max 0.1 1 180 GHz pF pF Unit μA μA Marking : ZD Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 42809AB MS IM TC-00001957 No. A1116-1/6 55GN01NA Continued from preceding page. Parameter Forward Transfer Gain Noise Figure Symbol ⏐S21e⏐ 1 2 ⏐S21e⏐ 2 NF 2 Conditions VCE=5V, IC=20mA, f=1GHz VCE=5V, IC=20mA, f=400MHz VCE=3V, IC=5mA, f=1GHz, ZS=ZL=50Ω Ratings min 5 10 typ 7 13 1.9 max Unit dB dB dB Package Dimensions unit : mm (typ) 7522-003 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 14.0 5.0 0.44 123 1 : Base 2 : Emitter 3 : Collector 1.3 1.3 SANYO : NP 50 45 IC -- VCE 0.30m A Collector Current, IC -- mA 80 70 60 50 40 30 20 10 IC -- VBE VCE=5V Collector Current, IC -- mA 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 0.25mA 0.20mA 0.15mA 0.10mA 0.05mA IB=0mA 7 8 9 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT06253 Collector-to-Emitter Voltage, VCE -- V IT06252 Base-to-Emitter Voltage, VBE -- V No. A1116-2/6 55GN01NA 3 hFE -- IC VCE=5V Gain-Bandwidth Product, f T -- GHz 10 f T -- IC VCE=5V 7 2 DC Current Gain, hFE 5 3 100 2 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 5 7 100 IT06254 1.0 1.0 2 3 5 7 10 2 3 5 Cob -- VCB Reverse Transfer Capacitance, Cre -- pF f=1MHz Collector Current, IC -- mA 5 7 100 IT07406 Cre -- VCB f=1MHz Output Capacitance, Cob -- pF 3 3 2 2 1.0 1.0 7 5 0.1 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 3.0 IT07408 16 NF -- IC Collector-to-Base Voltage, VCB -- V ⏐S21e⏐2 -- IC f=400MHz IT07409 Forward Transfer Gain, ⏐S21e⏐ -- dB VCE=3V f=1GHz Zo=50Ω VCE=5V 14 Noise Figure, NF -- dB 2.5 2 12 10 2.0 8 f=1GHz 1.5 6 4 2 1.0 1.0 1.0 2 3 5 7 Collector Current, IC -- mA 450 400 10 IT05674 2 3 5 7 10 2 3 5 PC -- Ta Collector Current, IC -- mA 7 100 IT07407 Collector Dissipation, PC -- mW 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT07410 No. A1116-3/6 55GN01NA S Parameters (Common emitter) VCE=5V, IC=1mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.943 0.859 0.621 0.398 0.293 0.321 0.412 0.506 0.608 0.682 0.730 ∠S11 --21.54 --42.64 --84.31 --128.72 175.87 128.34 98.48 79.14 63.42 49.93 37.12 ⏐S21⏐ 3.196 3.033 2.581 2.188 1.845 1.586 1.387 1.203 1.041 0.880 0.746 ∠S21 157.89 137.45 101.05 70.15 43.99 21.39 1.15 --17.54 --34.64 --48.35 --59.47 ⏐S12⏐ 0.049 0.089 0.141 0.163 0.186 0.224 0.286 0.360 0.428 0.479 0.510 ∠S12 75.41 62.59 42.68 34.48 31.55 30.55 25.00 14.93 1.54 --13.03 --27.54 ⏐S22⏐ 0.976 0.918 0.765 0.643 0.557 0.476 0.402 0.338 0.338 0.409 0.507 ∠S22 --12.26 --23.34 --40.98 --53.98 --67.68 --85.66 --111.30 --149.61 162.40 121.17 91.78 VCE=5V, IC=3mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.804 0.585 0.290 0.130 0.085 0.175 0.293 0.412 0.531 0.621 0.685 ∠S11 --32.40 --55.65 --84.97 --115.59 161.69 112.07 91.78 77.04 63.46 50.74 38.34 ⏐S21⏐ 8.238 6.453 4.082 2.993 2.401 2.029 1.768 1.538 1.337 1.147 0.990 ∠S21 142.84 116.32 82.70 59.77 40.03 21.35 3.22 --14.06 --30.59 --45.02 --57.83 ⏐S12⏐ 0.045 0.073 0.123 0.168 0.223 0.280 0.336 0.389 0.433 0.466 0.491 ∠S12 73.04 62.58 54.56 48.90 40.68 31.13 20.03 7.76 --5.27 --17.84 --30.60 ⏐S22⏐ 0.893 0.746 0.584 0.499 0.418 0.324 0.227 0.157 0.199 0.303 0.411 ∠S22 --19.66 --30.06 --41.23 --51.80 --66.00 --84.62 --112.98 --164.54 134.30 100.00 79.31 VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.682 0.442 0.208 0.088 0.034 0.140 0.266 0.390 0.510 0.602 0.668 ∠S11 --38.10 --56.42 --71.35 --86.87 149.18 104.71 89.28 75.83 63.13 50.55 38.16 ⏐S21⏐ 11.302 7.763 4.460 3.190 2.542 2.150 1.863 1.622 1.413 1.219 1.055 ∠S21 132.99 106.10 77.25 57.12 39.04 21.30 3.90 --12.95 --28.93 --43.09 --55.85 ⏐S12⏐ 0.040 0.068 0.121 0.176 0.235 0.295 0.350 0.401 0.438 0.467 0.490 ∠S12 71.69 65.81 59.57 52.06 42.45 30.94 18.79 5.97 --6.84 --19.34 --31.84 ⏐S22⏐ 0.817 0.660 0.531 0.459 0.378 0.279 0.177 0.121 0.192 0.299 0.403 ∠S22 --22.99 --30.32 --39.30 --50.11 --65.34 --84.88 --116.24 179.23 118.31 90.37 72.89 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.485 0.302 0.173 0.093 0.016 0.113 0.241 0.369 0.493 0.588 0.656 ∠S11 --41.64 --47.04 --47.23 --47.78 30.84 95.22 86.37 74.46 62.03 50.01 37.87 ⏐S21⏐ 15.144 8.855 4.759 3.367 2.673 2.252 1.949 1.689 1.477 1.273 1.111 ∠S21 118.22 95.57 72.34 54.88 38.26 21.35 4.47 --11.79 --27.39 --40.99 --53.67 ⏐S12⏐ 0.036 0.063 0.123 0.184 0.246 0.309 0.363 0.410 0.444 0.468 0.489 ∠S12 72.52 71.31 63.65 54.28 42.91 30.98 17.56 4.53 --8.58 --21.13 --33.27 ⏐S22⏐ 0.696 0.571 0.483 0.422 0.342 0.237 0.132 0.105 0.202 0.313 0.409 ∠S22 --25.07 --27.92 --36.07 --48.07 --64.25 --85.29 --122.60 153.44 103.83 81.36 66.66 No. A1116-4/6 55GN01NA S Parameters (Common emitter) VCE=5V, IC=15mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.393 0.262 0.173 0.104 0.028 0.106 0.234 0.364 0.488 0.582 0.651 ∠S11 --39.40 --38.91 --37.43 --38.16 7.07 91.07 85.64 74.15 61.92 49.99 37.88 ⏐S21⏐ 16.513 9.160 4.855 3.423 2.718 2.289 1.977 1.712 1.493 1.298 1.128 ∠S21 111.47 91.74 70.51 54.12 37.90 21.31 4.65 --11.33 --26.87 --40.45 --52.86 ⏐S12⏐ 0.034 0.063 0.125 0.187 0.252 0.314 0.369 0.414 0.447 0.470 0.488 ∠S12 76.73 73.11 65.36 55.16 43.45 30.76 17.31 3.76 --9.20 --21.60 --33.58 ⏐S22⏐ 0.638 0.540 0.468 0.409 0.329 0.221 0.117 0.106 0.213 0.321 0.415 ∠S22 --24.75 --25.92 --34.48 --47.14 --63.84 --85.01 --126.09 143.44 99.23 78.78 64.58 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.346 0.246 0.173 0.108 0.034 0.104 0.232 0.363 0.486 0.582 0.652 ∠S11 --36.01 --33.91 --32.88 --33.77 7.28 89.49 85.18 73.90 61.86 49.85 37.81 ⏐S21⏐ 17.139 9.298 4.887 3.442 2.732 2.301 1.991 1.721 1.504 1.298 1.132 ∠S21 107.73 89.56 69.69 53.42 37.56 21.18 4.67 --11.37 --26.71 --40.20 --52.56 ⏐S12⏐ 0.033 0.063 0.125 0.189 0.255 0.315 0.371 0.413 0.447 0.469 0.488 ∠S12 76.49 75.27 66.04 55.58 43.56 30.73 17.24 3.77 --9.38 --21.77 --33.82 ⏐S22⏐ 0.608 0.526 0.463 0.403 0.321 0.213 0.110 0.107 0.216 0.324 0.417 ∠S22 --23.92 --24.72 --33.79 --46.59 --63.41 --85.68 --127.83 139.24 97.22 77.62 63.99 VCE=5V, IC=30mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.293 0.228 0.169 0.107 0.039 0.110 0.238 0.367 0.491 0.584 0.654 ∠S11 --31.14 --27.21 --27.83 --29.09 15.22 88.31 84.51 73.61 61.74 49.63 37.73 ⏐S21⏐ 17.643 9.367 4.896 3.448 2.739 2.302 1.989 1.719 1.503 1.295 1.133 ∠S21 103.73 87.38 68.61 52.73 36.98 20.77 4.29 --11.62 --26.98 --40.37 --52.81 ⏐S12⏐ 0.033 0.063 0.125 0.190 0.255 0.316 0.371 0.415 0.448 0.470 0.488 ∠S12 80.19 75.47 66.51 55.90 43.60 30.46 17.10 3.59 --9.46 --21.95 --33.87 ⏐S22⏐ 0.576 0.511 0.455 0.397 0.316 0.206 0.102 0.106 0.219 0.327 0.418 ∠S22 --22.37 --23.14 --32.68 --45.90 --62.93 --85.04 --127.75 134.87 95.38 76.66 62.92 VCE=5V, IC=50mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.234 0.190 0.141 0.085 0.045 0.136 0.261 0.390 0.510 0.600 0.667 ∠S11 --26.34 --22.28 --22.30 --19.60 52.54 89.35 83.49 72.58 60.71 48.78 37.06 ⏐S21⏐ 17.554 9.191 4.777 3.367 2.670 2.250 1.943 1.678 1.460 1.265 1.104 ∠S21 100.28 85.28 67.06 51.37 35.54 19.09 2.65 --13.25 --28.69 --42.00 --54.45 ⏐S12⏐ 0.033 0.063 0.126 0.189 0.255 0.317 0.371 0.413 0.448 0.469 0.489 ∠S12 79.67 77.35 66.81 55.97 43.62 30.77 17.07 3.62 --9.60 --21.99 --34.03 ⏐S22⏐ 0.552 0.504 0.454 0.397 0.315 0.206 0.101 0.102 0.217 0.323 0.415 ∠S22 --20.20 --21.25 --31.75 --45.02 --62.21 --83.77 --126.95 135.16 95.69 76.16 63.17 No. A1116-5/6 55GN01NA SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2009. Specifications and information herein are subject to change without notice. PS No. A1116-6/6