55GN01SA

Ordering number : ENA1115 55GN01SA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01SA Features • • • UHF Wide-band Low-noise Amplifier Applications High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 3 70 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cob Cre 2 ⏐S21e⏐ NF Conditions VCB=10V, IE=0A VEB=2V, IC=0A VCE=5V, IC=10mA VCE=3V, IC=5mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=3V, IC=5mA, f=1GHz, ZS=ZL=50Ω Ratings min typ max 0.1 1 100 3.0 4.5 5.5 1.0 0.6 7 10 1.9 1.2 180 Unit μA μA GHz GHz pF pF dB dB Marking : ZD Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2908AB MS IM TC-00001679 No. A1115-1/6 55GN01SA Package Dimensions unit : mm (typ) 7027-002 1.6 0.8 0.4 0.4 0.2 1.6 0.5 0.5 1 2 3 0.1 0.3 0 to 0.1 0.1 MIN 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP 0.75 0.6 50 45 IC -- VCE 0.30m A 80 70 IC -- VBE VCE=5V Collector Current, IC -- mA 0.25mA Collector Current, IC -- mA 10 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 60 50 40 30 20 10 0.20mA 0.15mA 0.10mA 0.05mA IB=0mA 7 8 9 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT06253 Collector-to-Emitter Voltage, VCE -- V 3 IT06252 10 hFE -- IC Base-to-Emitter Voltage, VBE -- V f T -- IC VCE=5V Gain-Bandwidth Product, f T -- GHz 7 2 VCE=5V DC Current Gain, hFE 5 3 100 2 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 IT06254 1.0 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 IT06693 No. A1115-2/6 55GN01SA 3 Cob -- VCB Reverse Transfer Capacitance, Cre -- pF f=1MHz 3 Cre -- VCB f=1MHz Output Capacitance, Cob -- pF 2 2 1.0 1.0 7 7 5 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 3.0 IT06695 12 NF -- IC Collector-to-Base Voltage, VCB -- V ⏐S21e⏐2 -- IC VCE=5V f=1GHz IT06696 Forward Transfer Gain, ⏐S21e⏐2 -- dB VCE=3V f=1GHz ZO=50Ω 10 Noise Figure, NF -- dB 2.5 8 2.0 6 1.5 4 1.0 1.0 2 3 5 7 Collector Current, IC -- mA 120 10 IT05674 2 1.0 2 3 5 7 10 2 3 5 PC -- Ta Collector Current, IC -- mA 7 100 IT06694 Collector Dissipation, PC -- mW 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT06697 No. A1115-3/6 55GN01SA S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 ⏐S11⏐ 0.818 0.723 0.619 0.590 0.566 0.553 0.546 0.536 0.529 0.518 0.515 0.506 0.502 0.496 0.495 0.488 ∠S11 --45.11 --79.29 --119.57 --140.45 --153.95 --163.02 --170.25 --176.36 178.47 173.34 168.18 163.01 158.27 153.59 148.84 144.62 ⏐S21⏐ 12.945 10.378 6.589 4.732 3.677 3.000 2.547 2.214 1.979 1.790 1.642 1.499 1.394 1.299 1.220 1.152 ∠S21 149.89 128.84 105.34 92.21 82.43 74.67 67.70 61.57 55.95 50.69 45.28 40.79 36.26 32.33 28.79 25.31 ⏐S12⏐ 0.040 0.063 0.082 0.094 0.106 0.118 0.132 0.145 0.162 0.178 0.197 0.216 0.236 0.257 0.281 0.307 ∠S12 68.19 53.36 43.85 44.40 46.39 48.68 51.04 53.10 54.51 55.69 56.79 56.84 56.80 56.63 56.40 55.34 ⏐S22⏐ 0.882 0.708 0.504 0.422 0.387 0.369 0.368 0.374 0.376 0.387 0.393 0.403 0.415 0.423 0.431 0.440 ∠S22 -23.66 -38.25 -50.00 -54.83 -58.60 -62.43 -65.91 -70.19 -73.95 -77.80 -81.33 -85.56 -89.57 -93.86 -98.20 -101.75 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 ⏐S11⏐ 0.695 0.600 0.540 0.532 0.522 0.517 0.511 0.507 0.498 0.493 0.489 0.483 0.479 0.474 0.474 0.469 ∠S11 --65.56 --104.03 --139.63 --154.82 --165.18 --171.99 --177.34 177.38 173.40 169.08 164.42 159.69 155.72 151.50 146.89 142.97 ⏐S21⏐ 19.851 13.662 7.785 5.405 4.152 3.356 2.845 2.469 2.199 1.991 1.824 1.665 1.549 1.446 1.358 1.283 ∠S21 138.84 117.33 97.63 87.15 79.02 72.24 66.21 60.71 55.55 50.67 45.74 41.25 36.93 32.96 29.71 26.10 ⏐S12⏐ 0.033 0.049 0.065 0.081 0.099 0.115 0.134 0.153 0.172 0.191 0.212 0.234 0.254 0.272 0.296 0.318 ∠S12 62.31 51.12 51.35 53.63 57.04 59.04 59.83 59.98 60.01 59.81 59.31 58.55 57.22 56.69 55.40 54.29 ⏐S22⏐ 0.773 0.552 0.370 0.312 0.294 0.283 0.284 0.294 0.300 0.309 0.315 0.327 0.337 0.345 0.353 0.364 ∠S22 -33.54 -48.13 -56.25 -60.19 -64.03 -67.23 -70.66 -74.85 -78.33 -82.14 -85.02 -88.98 -92.57 -96.49 -100.19 -103.38 No. A1115-4/6 55GN01SA S Parameters (Common emitter) VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 ⏐S11⏐ 0.570 0.520 0.503 0.506 0.504 0.498 0.496 0.492 0.488 0.481 0.481 0.472 0.472 0.467 0.467 0.462 ∠S11 -89.86 -126.23 -153.83 -164.64 -172.52 -177.66 177.98 173.75 170.09 166.42 162.19 158.01 154.06 149.87 145.82 142.08 ⏐S21⏐ 25.811 15.701 8.426 5.772 4.408 3.555 3.013 2.611 2.319 2.096 1.917 1.760 1.633 1.523 1.434 1.354 ∠S21 127.74 108.51 92.69 83.96 76.83 70.62 65.15 59.99 55.01 50.36 45.65 41.21 37.24 33.18 29.86 26.43 ⏐S12⏐ 0.027 0.038 0.057 0.077 0.098 0.116 0.139 0.158 0.179 0.200 0.221 0.240 0.260 0.280 0.304 0.326 ∠S12 57.86 55.16 59.71 63.42 64.34 64.27 64.39 63.46 63.02 61.78 60.80 59.60 57.83 56.85 55.35 53.94 ⏐S22⏐ 0.639 0.416 0.276 0.242 0.234 0.228 0.235 0.246 0.252 0.262 0.268 0.283 0.293 0.300 0.311 0.318 ∠S22 --42.89 --54.85 --59.96 --62.99 --67.02 --70.93 --74.09 --78.62 --81.39 --85.56 --87.90 --91.47 --94.81 --98.53 --102.06 --104.23 VCE=5V, IC=30mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 ⏐S11⏐ 0.523 0.498 0.498 0.503 0.500 0.499 0.498 0.494 0.489 0.484 0.483 0.476 0.476 0.471 0.471 0.467 ∠S11 -103.16 -136.49 -159.57 -168.52 -175.28 -179.85 176.25 172.08 169.05 165.09 161.02 157.15 153.18 149.16 145.15 141.40 ⏐S21⏐ 27.751 16.132 8.503 5.802 4.429 3.582 3.013 2.615 2.324 2.102 1.925 1.762 1.634 1.524 1.436 1.355 ∠S21 122.53 104.97 90.63 82.53 75.68 69.78 64.35 59.21 54.35 49.78 45.03 40.66 36.62 32.74 29.38 25.99 ⏐S12⏐ 0.024 0.035 0.054 0.076 0.097 0.118 0.138 0.161 0.180 0.200 0.222 0.243 0.263 0.283 0.307 0.329 ∠S12 59.02 57.80 63.85 67.20 66.04 66.40 66.22 65.47 64.05 62.79 61.56 60.04 58.71 57.48 55.99 54.46 ⏐S22⏐ 0.569 0.361 0.244 0.219 0.215 0.215 0.222 0.233 0.241 0.250 0.258 0.273 0.286 0.294 0.302 0.312 ∠S22 --46.47 --56.04 --59.31 --62.34 --66.55 --70.37 --73.72 --78.23 --81.44 --85.19 --87.77 --90.81 --94.60 --98.35 --101.47 --103.95 No. A1115-5/6 55GN01SA SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A1115-6/6