5HP02N

Ordering number:ENN6530 P-Channel Silicon MOSFET 5HP02N Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2178 [5HP02N] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.3 1.3 1 : Source 2 : Drain 3 : Gate SANYO : NP Ratings –50 ±20 –0.14 –0.56 0.4 150 –55 to +150 Unit V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=–1mA, VGS=0 VDS=–50V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–100µA VDS=–10V, ID=–70mA ID=–70mA, VGS=–10V ID=–40mA, VGS=–4V –1 0.12 0.16 4.7 6.5 6.1 9.1 Conditions Ratings min –50 –10 ±10 –2.5 typ max Unit V µA µA V S Ω Ω Marking : XF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2000TS (KOTO) TA-2936 No.6530-1/4 5HP02N Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=–10V, VGS=–10V, ID=–140mA VDS=–10V, VGS=–10V, ID=–140mA VDS=–10V, VGS=–10V, ID=–140mA IS=–140mA, VGS=0 Conditions Ratings min typ 23 11 4 13 10 190 95 1.68 0.22 0.43 –0.83 –1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN VIN VDD=--25V ID=--70mA RL=357Ω 0V --10V PW=10µs D.C.≤1% D G VOUT 5HP02N P.G 50Ω S --0.14 ID -- VDS 0V --6 .0V --0.30 ID -- VGS VDS= --10V --0.12 --0.25 Drain Current, ID – A .0V --10 --4 . --0.10 Drain Current, ID – A --0.20 --0.08 --0.15 --0.06 --3.0V --0.10 --0.04 --0.02 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --0.05 VGS= --2.5V 0 --1.4 --1.6 --1.8 --2.0 0 --1 --2 --3 --4 --5 --6 IT00263 Drain-to-Source Voltage, VDS – V 10 IT00262 Gate-to-Source Voltage, VGS – V 10 RDS(on) -- VGS Ta=25°C RDS(on) -- ID VGS= --10V Ta=75°C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS (on) – Ω 9 Static Drain-to-Source On-State Resistance, RDS (on) – Ω 7 8 --40mA ID= --70mA 5 7 3 6 2 5 4 --2 --3 --4 --5 --6 --7 --8 --9 --10 Gate-to-Source Voltage, VGS – V 1.0 --0.01 2 3 5 7 25°C 2 3 --8.0V Ta= -25°C 75°C --0.1 5 IT00265 IT00264 Drain Current, ID – A No.6530-2/4 5HP02N 100 7 RDS(on) -- ID VGS= --4V 12 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) – Ω 5 Static Drain-to-Source On-State Resistance, RDS(on) – Ω 10 3 2 8 10 7 5 3 2 1.0 --0.01 Ta=75°C --25°C 25°C 6 -I D= 40m A, = -V GS 4V 10V -I D= 70m -S= A, VG 4 2 2 3 5 7 --0.1 2 3 5 IT00266 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Drain Current, ID – A 1.0 Ambient Temperature, Ta – ˚C --1.0 IT00267 yfs -- ID VDS= --10V IF -- VSD VGS=0 Forward Transfer Admittance, | yfs | – S 7 5 3 2 7 5 Forward Current, IF – A 3 2 0.1 7 5 3 2 C 25° --0.1 7 5 3 2 0.01 --0.01 2 3 5 7 Drain Current, ID – A --0.1 2 3 5 IT00268 --0.01 --0.2 --0.4 --0.6 Ta= 75° C 25° C --25 °C --0.8 --1.0 °C --25 Ta= 75°C --1.2 IT00269 Diode Forward Voltage, VSD – V 100 1000 7 5 SW Time -- ID VDD= --25V VGS= --10V Ciss, Coss, Crss -- VDS f=1MHz 7 5 Switching Time, SW Time – ns 3 Ciss, Coss, Crss – pF 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.01 td(off) tf 3 2 Ciss tr td(on) 10 7 5 3 2 Coss Crss 1.0 2 3 5 7 --0.1 2 3 0 --5 --10 --15 --20 --25 --30 --35 --40 --45 --50 Drain Current, ID – A --10 --9 IT00270 0.5 Drain-to-Source Voltage, VDS – V IT00271 VGS -- Qg Allowable Power Dissipation, PD – W VDS= --10V ID= --140mA PD -- Ta Gate-to-Source Voltage, VGS – V --8 --7 --6 --5 --4 --3 --2 --1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Total Gate Charge, Qg – nC IT00272 Ambient Temperature, Ta – ˚C IT01995 No.6530-3/4 5HP02N Note on usage : Since the 5HP02N is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2000. Specifications and information herein are subject to change without notice. PS No.6530-4/4