5LN01M

Ordering number : EN6137A 5LN01M SANYO Semiconductors DATA SHEET 5LN01M Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 50 ± 10 0.1 0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=50V, VGS=0V VGS=± 8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=4V ID=30mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 50 1 ± 10 0.4 0.13 0.18 6 7.1 10 6.6 4.7 1.7 7.8 9.9 20 1.3 typ max Unit V µA µA V S Ω Ω Ω pF pF pF Marking : YB Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 31506PE MS IM TB-00002111 / 31000 TS (KOTO) TA-2048 No.6137-1/4 5LN01M Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA IS=100mA, VGS=0V Ratings min typ 18 42 190 105 1.57 0.20 0.32 0.85 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7023-010 0.425 Switching Time Test Circuit VDD=25V VIN ID=50mA RL=500Ω VOUT 4V 0V 0.2 VIN 0.3 0.15 3 PW=10µs D.C.≤1% D G 1.25 2.1 0 to 0.1 5LN01M 0.425 1 2 0.65 0.65 2.0 P.G 0.3 0.9 0.6 50Ω S 1 : Gate 2 : Source 3 : Drain SANYO : MCP 0.10 0.09 0.08 ID -- VDS 3.0 0.20 ID -- VGS VDS=10V 3.5V 4.0V V Drain Current, ID -- A 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 0.2 0.4 0.6 0.8 1.0 IT00054 Drain Current, ID -- A 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 0.5 1.0 1.5 75° C 2.0 6.0 VGS=1.5V V Ta=-2 25° C 2.5 0.16 5°C 2. 5V V 2.0 0.18 3.0 IT00055 Drain-to-Source Voltage, VDS -- V 12 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 100 7 RDS(on) -- ID Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 11 10 9 8 7 6 5 4 3 2 0 1 2 3 4 5 6 7 8 9 10 5 3 2 50mA ID=30mA 10 7 5 3 2 Ta=75°C 25°C --25°C 1.0 0.01 2 3 5 7 0.1 2 3 5 Gate-to-Source Voltage, VGS -- V IT00056 Drain Current, ID -- A 7 1.0 IT00057 No.6137-2/4 5LN01M 100 7 RDS(on) -- ID VGS=2.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 100 7 5 3 2 RDS(on) -- ID VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 10 7 5 3 2 Ta=75°C --25°C 25°C Ta=75°C 10 7 5 3 2 25°C --25°C 1.0 0.01 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 14 1.0 IT00058 7 1.0 0.001 2 3 5 7 0.01 2 3 5 RDS(on) -- Ta Drain Current, ID -- A 1.0 7 0.1 IT00059 yfs -- ID 12 Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 8 =3 ID 0m A 2 S= , VG .5V -2 Ta=- 5 °C 25°C 6 50 I D= m A, =4. V GS 0V 75°C 0.1 7 5 3 2 0.01 0.01 4 2 0 --60 --40 --20 Ambient Temperature, Ta -- °C 0 20 40 60 80 100 120 140 160 2 3 5 7 0.1 2 3 5 IT00060 1000 7 1.0 7 5 IS -- VSD VGS=0V Switching Time, SW Time -- ns Drain Current, ID -- A 7 1.0 IT00061 SW Time -- ID VDD=25V VGS=4V 5 3 2 Source Current, IS -- A 3 2 td(off) tf Ta =7 5° C 25 °C 0.1 7 5 3 2 0.01 0.5 100 7 5 3 2 10 0.01 --25 °C tr td(on) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00062 2 3 5 7 Diode Forward Voltage, VSD -- V 100 7 5 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V Drain Current, ID -- A 10 9 8 7 6 5 4 3 2 1 0.1 IT00063 VGS -- Qg VDS=10V ID=100mA Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 Ciss Coss Crss 1.0 0 5 10 15 20 25 30 35 40 45 50 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Drain-to-Source Voltage, VDS -- V IT00064 Total Gate Charge, Qg -- nC IT00065 No.6137-3/4 5LN01M 0.20 PD -- Ta Allowable Power Dissipation, PD -- W 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT00066 Note on usage : Since the 5LN01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No.6137-4/4