5LP01M_06

Ordering number : EN6135A 5LP01M SANYO Semiconductors DATA SHEET 5LP01M Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings --50 ±10 --0.07 --0.28 0.15 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-50V, VGS=0V VGS=± 8V, VDS=0V VDS=-10V, ID=-100µA VDS=-10V, ID=--40mA ID=--40mA, VGS=--4V ID=--20mA, VGS=--2.5V ID=--5mA, VGS=-1.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --50 --1 ± 10 --0.4 70 100 18 20 30 7.4 4.2 1.3 23 28 60 --1.4 typ max Unit V µA µA V mS Ω Ω Ω pF pF pF Marking : XB Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 42006PE MS IM TB-00002113 / 31000 TS (KOTO) TA-2040 No.6135-1/4 5LP01M Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--70mA VDS=--10V, VGS=-10V, ID=--70mA VDS=--10V, VGS=-10V, ID=--70mA IS=--70mA, VGS=0V Ratings min typ 20 35 160 150 1.40 0.16 0.23 --0.85 --1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7023-010 0.425 0.2 0.3 0.15 Switching Time Test Circuit 3 0V --4V VIN VIN VDD= --25V ID= --40mA RL=625Ω VOUT 1.25 2.1 0 to 0.1 PW=10µs D.C.≤1% D G 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 5LP01M P.G 50Ω S 1 : Gate 2 : Source 3 : Drain SANYO : MCP --0.07 ID -- VDS 0V --0.14 ID -- VGS Ta= -25°C VDS= --10V 0V --6 . --0.06 --2 .5 V --0.12 Drain Current, ID -- A --0.05 Drain Current, ID -- A --3 --0.10 --0.04 --0.08 --0.03 --0.06 --0.02 VGS= --1.5V --0.04 --0.01 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --0.02 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 40 IT00090 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 5 75° C .0V --2 25°C --4 . .5V IT00091 RDS(on) -- ID Ta=25°C VGS= --4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 35 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 30 3 Ta=75°C 2 25 --20mA 20 ID= --40mA 25°C --25°C 15 10 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 10 --0.01 2 3 5 7 --0.1 2 3 Gate-to-Source Voltage, VGS -- V IT00092 Drain Current, ID -- A IT00093 No.6135-2/4 5LP01M 7 5 RDS(on) -- ID VGS= --2.5V 7 RDS(on) -- ID VGS= --1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3 2 5 Ta=75°C 3 100 7 5 3 2 Ta=75°C 25°C --25°C 25°C --25°C 2 10 --0.01 2 3 5 7 --0.1 2 3 10 --0.001 2 3 5 7 --0.01 2 3 Drain Current, ID -- A 40 IT00094 5 Drain Current, ID -- A RDS(on) -- Ta yfs -- ID IT00095 Forward Transfer Admittance, yfs -- S VDS= --10V 3 2 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 35 30 25 20 0V -4. A =0m S -2 =, VG ID mA -40 =ID -2. =S , VG 5V 0.1 7 5 3 2 2 Ta= -- 5 °C 25°C 75°C 15 10 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 3 2 0.01 --0.01 2 3 5 7 --0.1 2 3 IT00096 1000 IS -- VSD VGS=0V Drain Current, ID -- A IT00097 SW Time -- ID 7 Switching Time, SW Time -- ns 5 3 2 VDD= --25V VGS = --4V tf td(off) Source Current, IS -- A --0.1 7 5 100 7 5 3 2 10 --0.01 3 tr td(on) 2 Ta=7 5°C --0.01 --0.5 25 ° C --25°C --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 IT00098 2 3 5 7 --0.1 IT00099 Diode Forward Voltage, VSD -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0 --5 --10 --15 --20 --25 --30 --35 Ciss, Coss, Crss -- VDS f=1MHz Drain Current, ID -- A --10 --9 VGS -- Qg Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --70mA --8 --7 --6 --5 --4 --3 --2 --1 0 Ciss, Coss, Crss -- pF Ciss Coss Crss --40 --45 --50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V IT00100 Total Gate Charge, Qg -- nC IT00101 No.6135-3/4 5LP01M 0.20 PD -- Ta Allowable Power Dissipation, PD -- W 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT00102 Note on usage : Since the 5LP01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.6135-4/4