Ordering number : ENA1837
AML2002
SANYO Semiconductors
DATA SHEET
AML2002
Features
• • • •
NPN Epitaxial Planar Silicon Transistor
LED Back Light
VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A The plastic-covered heat sink eliminates the need for an insulator when mounting the AML2002
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 220 200 8 0.7 2 1.5 10 150 -55 to +150 Unit V V V A A W W °C °C
Package Dimensions
unit : mm (typ) 7516A-002
8.0 4.0 1.0 3.6 1.0 1.4 3.3 3.0
Product & Package Information
• Package : TO-126ML • JEITA, JEDEC : TO-126 • Minimum Packing Quantity : 200 pcs./bag
Marking
Electrical Connection
2
7.5
11.0
L2002
LOT No.
3
1.5
1
2
3
15.5
1.6 0.8 0.8 0.75
1 3.0 0.7
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML
2.4 4.8
1.7
http://semicon.sanyo.com/en/network
12611CB TKIM TC-00002562 No. A1837-1/4
AML2002
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=100V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=100mA VCB=10V, f=1MHz IC=0.35A, IB=35mA IC=0.35A, IB=35mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 220 200 8 50 2 70 200 120 9 125 0.82 220 1.2 Ratings min typ max 1 1 560 MHz pF mV V V V V ns μs ns Unit μA μA
Switching Time Test Circuit
PW=50μs D.C.≤1% INPUT RB 50Ω + 820μF VCC=100V RL IB1 IB2 OUTPUT
IC=10IB1= --10IB2=0.3A
1.0 0.9
IC -- VCE
100mA
0.20
IC -- VCE
0μ A 80
80mA
Collector Current, IC -- A
0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0
600μA
500μA
700 μA
Collector Current, IC -- A
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
60mA 50mA 40mA 30mA 20mA
4mA 6mA 8mA
90
0μ A
1m
A
400μA
300μA
200μA
100μA
IB=0μA
10mA
2mA IB=0mA
0.9 1.0
0
1
2
3
4
5
6
7
8
9
10
Collector-to-Emitter Voltage, VCE -- V
0.8 0.7
IC -- VBE
IT15964 1000 7 5 3 2
Collector-to-Emitter Voltage, VCE -- V
hFE -- IC
IT15965
VCE=5V
Ta=75°C
VCE=5V
Collector Current, IC -- A
DC Current Gain, hFE
0.6 0.5 0.4 0.3
25°C --25°C
100 7 5 3 2 10 7 5 3 2
Ta= 75° C 25°C
0.1 0
--25°C
0.2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.0 0.01
2
3
5
7
0.1
2
3
5
Base-to-Emitter Voltage, VBE -- V
IT15966
Collector Current, IC -- A
7 1.0 IT15967
No. A1837-2/4
AML2002
100 7 5 3 2
hFE -- IC
Ta=25°C
Gain-Bandwidth Product, fT -- MHz
1000 7 5 3 2
fT -- IC
VCE=10V
DC Current Gain, hFE
100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7
1.0
0.5 V
.0V =5 E VC
V
2.0
V
100 7 5 3 2 10 0.01
0.1
2
3
5
Collector Current, IC -- A
100 7
Cob -- VCB
1.0 IT15956
7
2
3
5
7
0.1
2
3
5
Collector Current, IC -- A
1.0 7
VCE(sat) -- IC
7 1.0 IT15968
f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
IC / IB=10
Output Capacitance, Cob -- pF
5 3 2
5 3 2
10 7 5 3 2 1.0 0.1
0.1 7 5 3 2 0.01 0.01
7 Ta=
5°C
° --25
C
C 25°
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
10 7 5
VCE(sat) -- IC
5 7 100 IT15969
2
3
5
7
0.1
2
3
5
Collector Current, IC -- A
1.0
7 1.0 IT15970
VBE(sat) -- IC
Ta= --25°C
IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V
IC / IB=10
7
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1
5
25°C
75°C
3
°C Ta=75
2
--25°C
25°C
2
3
5
Collector Current, IC -- A
10 7 5 3 2
1.0 IT15971
7
0.1 0.01
2
3
5
7
0.1
2
3
5
ASO
Collector Current, IC -- A
10 7 5 3 2
ASO
7 1.0 IT15972
ICP=2A Collector Current, IC -- A IC=0.7A
10 0m
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