ATP103

Ordering number : ENA1623 ATP103 SANYO Semiconductors DATA SHEET ATP103 Features • • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --30 ±20 --55 --165 50 150 --55 to +150 57 --28 Unit V V A A W °C °C mJ A Note : *1 VDD=--10V, L=100μH, IAV=--28A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=- 1mA, VGS=0V VDS=- 30V, VGS=0V VGS=±16V, VDS=0V Ratings min --30 -1 ±10 typ max Unit V μA μA Marking : ATP103 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network D0209PA TK IM TC-00002144 No. A1623-1/4 ATP103 Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=- 10V, ID=- 1mA VDS=- 10V, ID=--28A ID=- 28A, VGS=- 10V ID=- 14A, VGS=- 4.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--55A VDS=--15V, VGS=--10V, ID=--55A VDS=--15V, VGS=--10V, ID=--55A IS=--55A, VGS=0V Ratings min --1.2 45 10 14.5 2430 555 395 19 400 150 145 47 10 8.7 --1.03 --1.5 13 20.5 typ max --2.6 Unit V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 4.6 2.6 0.4 4 7.3 1.7 2 0.5 1 0.8 2.3 2.3 3 9.5 0.55 0.7 0.6 4.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK Switching Time Test Circuit VIN VDD= --15V 0V --10V 0.1 VIN PW=10μs D.C.≤1% G D ID= --28A RL=0.54Ω VOUT P.G ATP103 50Ω S 6.05 No. A1623-2/4 ATP103 --55 ID -- VDS --6 .0V --8.0 --50 --45 5 --4. V 0V --10.0 V Tc= -25° C 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --60 25° C --2 5 °C --4.0V Drain Current, ID -- A --50 --40 --30 --20 --10 0 Drain Current, ID -- A --40 --35 --30 --25 --20 --15 --10 --5 0 0 --16 . VGS= --3.5V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 Tc= 7 5°C --3.5 --4.0 --4.5 25° C --5.0 IT15229 125 150 IT15231 --1.2 --1.4 IT15233 Drain-to-Source Voltage, VDS -- V 30 RDS(on) -- VGS IT15228 30 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 26 24 22 20 18 16 14 12 10 8 ID= --14A --28A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 28 Tc=25°C Single pulse Single pulse 25 20 15 = VGS 14 = -, ID .5V --4 A 10 --10 V GS= --28 V, I D= A 5 6 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 0 --50 --25 0 25 50 75 100 Gate-to-Source Voltage, VGS -- V 7 | yfs | -- ID IT15230 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 Case Temperature, Tc -- °C IS -- VSD Forward Transfer Admittance, | yfs | -- S 5 3 2 VDS= --10V Single pulse VGS=0V Single pulse 10 7 5 3 2 = Tc --2 C 5° °C 75 Source Current, IS -- A °C 25 Tc= 75°C 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT15232 0 --0.2 --0.4 --0.6 --25°C 25°C --0.8 --1.0 Drain Current, ID -- A 3 2 SW Time -- ID VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 1000 7 5 3 2 100 7 5 3 2 10 7 --0.1 Ciss td(off) tf tr 1000 7 5 3 2 Coss Crss td(on) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100 2 100 0 --5 --10 --15 --20 --25 75° C --30 IT15235 Tc=25°C Single pulse --70 ID -- VGS VDS= --10V Single pulse V Drain Current, ID -- A IT15234 Drain-to-Source Voltage, VDS -- V No. A1623-3/4 ATP103 --10 VGS -- Qg VDS= --15V ID= --55A Drain Current, ID -- A 5 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 ASO IDP= --165A ID= --55A 1 10 0ms 0m s DC op Gate-to-Source Voltage, VGS -- V --8 PW≤10μs 1 0μ s 10 0μ 1m s s --6 --4 Operation in this area is limited by RDS(on). er ati on --2 0 0 5 10 15 20 25 30 35 40 45 50 --0.1 --0.1 Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg -- nC 60 PD -- Tc IT15236 120 Drain-to-Source Voltage, VDS -- V EAS -- Ta IT15237 Allowable Power Dissipation, PD -- W Avalanche Energy derating factor -- % 50 100 40 80 30 60 20 40 10 20 0 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 175 IT10478 Case Temperature, Tc -- °C IT15238 Ambient Temperature, Ta -- °C Note on usage : Since the ATP103 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2009. Specifications and information herein are subject to change without notice. PS No. A1623-4/4