ATP113

Ordering number : ENA1755 ATP113 SANYO Semiconductors DATA SHEET ATP113 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications • • ON-resistance RDS(on)1=22.5mΩ(typ.) 4V drive Input Capacitance Ciss=2400pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --35 --105 50 150 --55 to +150 95 --18 Unit V V A A W °C °C mJ A Note : *1 VDD=--10V, L=500μH, IAV=--18A *2 L≤500μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 Product & Package Information • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 4.6 2.6 0.4 Packing Type: TL Marking ATP113 4 7.3 4.6 6.05 LOT No. TL 9.5 Electrical Connection 1.7 2 0.5 1 0.8 2.3 2.3 3 0.55 0.7 2,4 0.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK 1 0.1 3 http://semicon.sanyo.com/en/network 72110PA TK IM TC-00002330 No. A1755-1/4 ATP113 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=- 1mA, VGS=0V VDS=- 60V, VGS=0V VGS=±16V, VDS=0V VDS=- 10V, ID=- 1mA VDS=- 10V, ID=--18A ID=- 18A, VGS=- 10V ID=- 9A, VGS=- 4.5V ID=- 5A, VGS=- 4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--35A VDS=--30V, VGS=--10V, ID=--35A VDS=--30V, VGS=--10V, ID=--35A IS=--35A, VGS=0V Ratings min --60 -1 ±10 --1.2 37 22.5 27 29 2400 250 195 15 125 250 200 55 7.5 12 --0.98 --1.5 29.5 38 44 --2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN VDD= --30V 0V --10V VIN PW=10μs D.C.≤1% G D ID=18A RL=1.67Ω VOUT P.G ATP113 50Ω S --35 --30 ID -- VDS --4 --60 ID -- VGS --25 °C Tc= °C Tc= .0V --10 .0V -8. 0V -6. 0V . --3 5V --50 Drain Current, ID -- A --25 --20 --15 --10 --5 0 Drain Current, ID -- A --4 .5 V --40 --30 --16 --20 25 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 0 --0.5 --1.0 --1.5 --2.0 --2 5 --2.5 °C --10 75° C --3.0 --3.5 25°C --4.0 --4.5 IT15602 VGS= --3.0V Drain-to-Source Voltage, VDS -- V IT15601 Gate-to-Source Voltage, VGS -- V No. A1755-2/4 75° C Tc=25°C Single pulse VDS= --10V Single pulse .0 V ATP113 70 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C Single pulse ID= --18A 70 60 50 40 30 20 10 0 --50 RDS(on) -- Tc Single pulse 60 50 --9A 40 --5A 30 = -VGS = -, ID 4.0V 5A 20 = --1 VGS 0 --1 I= .0V, D 8A -I D= 5V, 4. = -V GS 9A 10 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 7 | yfs | -- ID IT15603 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Case Temperature, Tc -- °C IS -- VSD IT15604 Forward Transfer Admittance, | yfs | -- S 5 3 2 VDS= --10V Single pulse VGS=0V Single pulse 10 7 5 3 2 = Tc --2 C 5° 75 °C Source Current, IS -- A °C 25 5°C Tc= 7 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --0.01 7 5 3 2 --0.001 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 --1.3 Drain Current, ID -- A 1000 7 5 3 2 100 7 5 3 2 10 7 --0.1 SW Time -- ID IT15605 7 5 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V 25° C --25 °C IT15606 VDD= --30V VGS= --10V td(off) f=1MHz Ciss Switching Time, SW Time -- ns 3 tf Ciss, Coss, Crss -- pF 2 1000 7 5 3 2 tr Coss td(on) Crss 5 7 --10 2 3 5 7 --10 IT15607 3 2 --100 7 5 100 7 2 3 5 7 --1.0 2 3 0 --10 --20 --30 --40 --50 --60 IT15608 Drain Current, ID -- A --10 --9 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --30V ID= --35A Drain Current, ID -- A IDP= --105A (PW≤10μs) ID= --35A --8 --7 --6 --5 --4 --3 --2 --1 0 0 10 20 30 40 50 60 IT15609 3 2 --10 7 5 3 2 --1.0 7 5 3 2 1m 10 s 10 ms 0m DC s op era tio n 10 10 μs 0μ s Operation in this area is limited by RDS(on). --0.1 --0.1 Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 --100 IT15610 No. A1755-3/4 ATP113 60 PD -- Tc Avalanche Energy derating factor -- % 120 EAS -- Ta Allowable Power Dissipation, PD -- W 50 100 40 80 30 60 20 40 10 20 0 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 175 IT15179 Case Temperature, Tc -- °C IT15611 Ambient Temperature, Ta -- °C Note on usage : Since the ATP113 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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