ATP207

Ordering number : ENA1319 ATP207 SANYO Semiconductors DATA SHEET ATP207 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 40 ±20 65 195 50 150 --55 to +150 35 33 Unit V V A A W °C °C mJ A Note : *1 VDD=10V, L=50μH, IAV=33A *2 L≤50μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V Ratings min 40 1 ±10 typ max Unit V μA μA Marking : ATP207 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 91708PA TI IM TC-00001572 No. A1319-1/4 ATP207 Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=1mA VDS=10V, ID=33A ID=33A, VGS=10V ID=17A, VGS=4.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=20V, VGS=10V, ID=65A VDS=20V, VGS=10V, ID=65A VDS=20V, VGS=10V, ID=65A IS=65A, VGS=0V Ratings min 1.5 12 20 7 11 2710 330 220 27 290 170 110 54 14 11 1.0 1.2 9.1 15.5 typ max 2.6 Unit V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 4.6 2.6 0.4 4 7.3 1.7 2 0.5 1 0.8 2.3 2.3 3 9.5 0.55 0.7 0.6 4.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK Switching Time Test Circuit 10V 0V VIN VDD=20V 0.1 VIN PW=10μs D.C.≤1% G D ID=33A RL=0.61Ω VOUT ATP207 P.G 50Ω S 6.05 No. A1319-2/4 ATP207 100 ID -- VDS 8.0V 100 90 ID -- VGS VDS=10V Single pulse 0V 6.0 90 80 V Drain Current, ID -- A 10. Drain Current, ID -- A 4.5V 80 70 60 50 40 70 60 50 40 30 20 10 0 0 1 6 .0 V 4.0V 5°C 0.5 1.0 2.0 2.5 VGS=3.5V 20 10 2.0 0 0 1.5 Tc=25°C Single pulse 0.5 1.0 1.5 25 ° C 3.0 Tc= 7 3.5 --25° 4.0 4.5 30 C 5.0 5.5 6.0 Drain-to-Source Voltage, VDS -- V 25 RDS(on) -- VGS IT14023 25 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc IT14024 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 20 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C Single pulse Single pulse 20 ID=17A 15 33A 15 =4.5 VGS 10 =17 V, I D A 10 =10.0 VGS =33A V, I D 5 5 0 0 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 7 | yfs | -- ID IT14025 100 7 5 3 2 10 7 5 3 2 Case Temperature, Tc -- °C IS -- VSD IT14026 Forward Transfer Admittance, | yfs | -- S 5 3 VDS=0V Single pulse Source Current, IS -- A C 25° 5°C VGS=0V Single pulse 2 10 7 5 3 2 1.0 7 5 3 0.1 2 3 5 7 1.0 2 Tc= --2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 7 100 IT14027 0 0.2 0.4 Tc= 7 5°C 25°C --25°C 0.6 0.8 75°C 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 1.0 1.2 1.4 IT14028 SW Time -- ID 7 5 3 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=20V VGS=10V td(off) tf f=1MHz Ciss, Coss, Crss -- pF 2 1000 7 5 3 2 100 7 5 3 2 tr Coss Crss td(on) 100 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT14029 7 0 5 10 15 20 25 30 35 40 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V IT14030 No. A1319-3/4 ATP207 10 9 VGS -- Qg VDS=20V ID=65A Drain Current, ID -- A 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=195A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 IT14031 ID=65A 10 10 m 0m s s D 1m s PW≤10μs 10 μs 10 0μ s C op Operation in this area is limited by RDS(on). at er io n 0.1 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Total Gate Charge, Qg -- nC 60 PD -- Tc Drain-to-Source Voltage, VDS -- V 120 EAS -- Ta IT14032 Allowable Power Dissipation, PD -- W Avalanche Energy derating factor -- % 50 100 40 80 30 60 20 40 10 20 0 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 175 IT14011 Case Temperature, Tc -- °C IT14010 Ambient Temperature, Ta -- °C Note on usage : Since the ATP207 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice. PS No. A1319-4/4