ATP214

Ordering number : ENA1712 ATP214 SANYO Semiconductors DATA SHEET ATP214 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications • • ON-resistance RDS(on)1=6.2mΩ(typ.) 4V drive Input Capacitance Ciss=4850pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 75 225 60 150 --55 to +150 94 38 Unit V V A A W °C °C mJ A Note : *1 VDD=15V, L=100μH, IAV=38A *2 L≤100μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 Product & Package Information • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 4.6 2.6 0.4 Packing Type: TL Marking ATP214 LOT No. 4 4.6 6.05 7.3 9.5 TL Electrical Connection 1.7 2 0.5 1 0.8 2.3 2.3 3 0.55 0.7 2,4 0.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK 1 0.1 3 http://semicon.sanyo.com/en/network 70710PA TK IM TC-00002343 No. A1712-1/4 ATP214 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=38A ID=38A, VGS=10V ID=19A, VGS=4.5V ID=10A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=75A VDS=30V, VGS=10V, ID=75A VDS=30V, VGS=10V, ID=75A IS=75A, VGS=0V Ratings min 60 1 ±10 1.2 100 6.2 8.2 9.2 4850 370 280 30 240 360 250 96 18.5 18 0.93 1.2 8.1 11.5 14 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 10V 0V VIN VDD=30V VIN PW=10μs D.C.≤1% G D ID=38A RL=0.79Ω VOUT ATP214 P.G 50Ω S 75 ID -- VDS 6.0V 16.0V 10.0V 8. 0V 4.0 70 65 60 3.5 V V Tc=25°C 100 90 80 ID -- VGS VDS=10V Drain Current, ID -- A Drain Current, ID -- A 55 50 45 40 35 30 25 20 15 10 5 0 0 4.5 V 70 60 50 30 20 VGS=2.5V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 0 0 0.5 1.0 1.5 2.0 25 ° C 2.5 Tc= 75° C --25 °C 3.0 3.5 3.0V 40 4.0 4.5 Drain-to-Source Voltage, VDS -- V IT15694 Gate-to-Source Voltage, VGS -- V IT15695 No. A1712-2/4 ATP214 20 RDS(on) -- VGS ID=10A 19A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 18 16 14 Tc=25°C Single pulse 20 18 16 14 12 10 8 6 4 2 0 --60 --40 --20 0 RDS(on) -- Tc Single pulse 38A 12 10 8 6 4 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IT15696 = V GS A =19 , ID A 4.5V =38 = V, I D VGS .0 =10 VGS V, 4.0 10 I D= A 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 | yfs | -- ID Case Temperature, Tc -- °C 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 IS -- VSD IT15697 Forward Transfer Admittance, | yfs | -- S 2 100 7 5 3 2 10 7 5 3 2 VDS=10V Single pulse 25 = Tc 5°C --2 C 75° VGS=0V Single pulse Source Current, IS -- A °C 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 7 100 IT15698 0 0.2 0.4 Tc= 7 5°C 25°C --25 °C 0.6 0.8 1.0 1.2 1.4 IT15699 SW Time -- ID td(off) Switching Time, SW Time -- ns 5 3 2 VDD=30V VGS=10V 10000 7 5 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V f=1MHz Ciss, Coss, Crss -- pF 3 2 1000 7 5 3 2 100 7 tf 100 7 5 3 2 10 0.1 tr td(on) Coss Crss 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 10 9 VGS -- Qg 5 7 100 2 IT15700 0 10 20 30 40 50 60 IT15701 Drain-to-Source Voltage, VDS -- V 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=75A Drain Current, ID -- A IDP=225A (PW≤10μs) ID=75A 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 1m s 10 10 ms 0m s D C op a er tio n 10 10 μs 0μ s Operation in this area is limited by RDS(on). 0.1 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC IT15711 Drain-to-Source Voltage, VDS -- V 5 7 100 IT15514 No. A1712-3/4 ATP214 70 PD -- Tc Avalanche Energy derating factor -- % 120 EAS -- Ta Allowable Power Dissipation, PD -- W 60 50 40 30 20 10 0 100 80 60 40 20 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 175 IT15179 Case Temperature, Tc -- °C IT15513 Ambient Temperature, Ta -- °C Note on usage : Since the ATP214 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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