ATP613

Ordering number : ENA1903 ATP613 SANYO Semiconductors DATA SHEET ATP613 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications • • Reverse recovery time trr=60ns(typ.) Input Capacitance Ciss=350pF(typ.) Halogen free compliance ON-resistance RDS(on)=1.55Ω(typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Source-to-Drain Diode Forward Current (DC) Source-to-Drain Diode Forward Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 500 ±30 5.5 19 5.5 19 70 150 --55 to +150 93 5.5 Unit V V A A A A W °C °C mJ A Note : *1 VDD=99V, L=5mH, IAV=5.5A *2 L≤5mH, Single pulse (Fig.1) Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 4.6 2.6 0.4 Product & Package Information • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP613 4 6.05 7.3 9.5 4.6 LOT No. TL 1.7 2 0.5 1 0.8 2.3 2.3 3 0.55 0.7 Electrical Connection 0.4 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 2,4 0.1 SANYO : ATPAK 3 http://semicon.sanyo.com/en/network D1510QB TKIM TC-00002545 No. A1903-1/5 ATP613 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr IS=5.5A, VGS=0V See Fig.3 IS=5.5A, VGS=0V, di/dt=100A/μs VDS=200V, VGS=10V, ID=5.5A See Fig.2 VDS=30V, f=1MHz Conditions ID=10mA, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2.75A ID=2.75A, VGS=10V Ratings min 500 100 ±100 3 1.5 2.9 1.55 350 68 15 14.2 46 37.6 20.4 13.8 3.2 7.6 1.1 60 120 1.5 2.0 5 typ max Unit V μA nA V S Ω pF pF pF ns ns ns ns nC nC nC V ns nC Fig.1 Avalanche Resistance Test Circuit D ≥50Ω RG L Fig.2 Switching Time Test Circuit 10V 0V VIN VDD=200V ID=2.75A RL=72.8Ω D VDD PW=10μs D.C.≤0.5% G VOUT G S ATP613 VIN 10V 0V 50Ω ATP613 P.G RGS=50Ω S Fig.3 Reverse Recovery Time Resistance Test Circuit ATP613 G S VDD=50V D 500μH Driver MOSFET No. A1903-2/5 ATP613 Tc=25°C 15V VDS=20V 10 Tc= --25 °C 12 ID -- VDS 12 ID -- VGS 25°C 10 Drain Current, ID -- A Drain Current, ID -- A 10V 8 8 8V 6 75°C 6 0 6V VGS=5V 0 2 4 6 8 10 12 14 16 18 20 0 0 2 4 6 --25 °C 8 25° C 2 2 Tc= 75° 4 7V 4 C 10 12 IT16202 Drain-to-Source Voltage, VDS -- V 5.0 4.5 RDS(on) -- VGS IT16201 5.0 4.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc ID=2.75A Single pulse Single pulse Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 15 IT16203 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --50 --25 0 25 50 75 100 125 150 Tc=75°C 25°C --25°C = V GS 2. I D= 0V, 1 75A Gate-to-Source Voltage, VGS -- V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 | yfs | -- ID Case Temperature, Tc -- °C 100 7 5 3 2 IS -- VSD IT16204 Forward Transfer Admittance, | yfs | -- S VDS=10V C 25° Tc= --2 5°C VGS=0V Single pulse 75° C Source Current, IS -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.2 Drain Current, ID -- A 1000 7 5 7 10 IT16205 0.4 Tc= 75 °C 25° C --25 °C 0.6 0.8 1.0 1.2 1.4 1.6 SW Time -- ID Switching Time, SW Time -- ns 5 3 2 VDD=200V VGS=10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT16206 f=1MHz Ciss 100 7 5 3 2 10 0.1 100 7 5 3 2 10 Cos s tf td (off) tr Crs s td(on) 2 3 5 7 1.0 2 3 5 10 IT16207 7 0 5 10 15 20 25 30 35 40 45 50 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V IT16208 No. A1903-3/5 ATP613 10 9 VGS -- Qg VDS=200V ID=5.5A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=19A (PW≤10μs) 10 ID=5.5A DC 0m op s er ati o 10μ s 0μ s 10 10 1m m s s Operation in this area is limited by RDS(on). n Tc=25°C 2 3 5 7 100 2 3 0.01 Single pulse 23 5 7 10 1.0 Total Gate Charge, Qg -- nC 80 PD -- Tc IT16209 120 Drain-to-Source Voltage, VDS -- V EAS -- Ta 5 7 1000 IT16710 Allowable Power Dissipation, PD -- W 70 60 50 40 30 20 10 0 Avalanche Energy derating factor -- % 100 80 60 40 20 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 175 IT16212 Case Temperature, Tc -- °C IT16211 Ambient Temperature, Ta -- °C No. A1903-4/5 ATP613 Note on usage : Since the ATP613 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2010. Specifications and information herein are subject to change without notice. PS No. A1903-5/5